FMMT38

FMMT38A ZETEX | Alldatasheet

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SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996

FEATURES

• 60 Volt V CEO * Gain of 10K at I C=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 800 mA Continuous Collector Current I C 300 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=10 /G01 A, I E=0 Collector-Emitter Sustaining Voltage VCEO(sus) 60 V I C=10mA, I B=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10 /G01 A, I C=0 Collector Cut-Off Current ICBO 100 nA V CB=60V, I E=0 Emitter Cut-Off Current I EBO 100 nA V EB=8V, I C=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V I C=800mA, I B=8mA* Base-Emitter Turn-on Voltage VBE(on) 1.8 V I C=800mA, V CE=5V* Static Forward Current Transfer Ratio FMMT38A h FE 500 1000 IC=100mA, V CE=5V* IC=500mA, V CE=5V* FMMT38B 2000 4000 IC=100mA, V CE=5V* IC=500mA, V CE=5V* FMMT38C 5000 10000 IC=100mA, V CE=5V* IC=500mA, V CE=5V* *Measured under pulsed conditions. Pulse width=300/G01 s. Duty cycle /G02 2% Spice parameter data is available upon request for this device FMMT38A FMMT38B FMMT38C C B E 0.0001 150 100 Pulse Width (seconds) 10 10010.10.010.001 D=1 (D.C.) D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 0.001 0.01 0.1 1 0.8 0.2 1.0 TYPICAL CHARACTERISTICS VCE(sat) v IC IC - Collector Current (Amps) VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) VBE(on) v IC VBE - (Volts) VBE(sat) - (Volts) 0.4 0.001 0.01 0.1 10 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 IC - Collector Current (Amps) hFE v IC hFE - Normalised Gain 1.0 0.5 2.0 1.5 VCE=5VIC/IB=100 0.6 0.001 0.01 0.1 1 10 IC/IB=100 1.0 0.5 2.0 1.5 0.001 0.01 0.1 1 10 VCE=5V -55°C +25°C +100°C +175°C -55°C +25°C +100°C +175°C -55°C +25°C +100°C -55°C +25°C +100°C +175°C Maximum transient thermal impedance Thermal Resistance (°C/W) 100m 100ms IC - Collector Current (A) DC VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100us 1 10 100 10m 100m FMMT38A FMMT38B FMMT38C 3 - 101 3 - 100

SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996

• 60 Volt V CEO * Gain of 10K at I C=0.5 Amp PARTMARKING DETAILS – FMMT38A – 4J FMMT38B – 5J FMMT38C – 7J ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 10 V Peak Pulse Current I CM 800 mA Continuous Collector Current I C 300 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=10 /G01 A, I E=0 Collector-Emitter Sustaining Voltage VCEO(sus) 60 V I C=10mA, I B=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10 /G01 A, I C=0 Collector Cut-Off Current ICBO 100 nA V CB=60V, I E=0 Emitter Cut-Off Current I EBO 100 nA V EB=8V, I C=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V I C=800mA, I B=8mA* Base-Emitter Turn-on Voltage VBE(on) 1.8 V I C=800mA, V CE=5V* Static Forward Current Transfer Ratio FMMT38A h FE 500 1000 IC=100mA, V CE=5V* IC=500mA, V CE=5V* FMMT38B 2000 4000 IC=100mA, V CE=5V* IC=500mA, V CE=5V* FMMT38C 5000 10000 IC=100mA, V CE=5V* IC=500mA, V CE=5V* *Measured under pulsed conditions. Pulse width=300/G01 s. Duty cycle /G02 2% Spice parameter data is available upon request for this device FMMT38A FMMT38B FMMT38C C B E 0.0001 150 100 Pulse Width (seconds) 10 10010.10.010.001 D=1 (D.C.) D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 0.001 0.01 0.1 1 0.8 0.2 1.0 TYPICAL CHARACTERISTICS VCE(sat) v IC IC - Collector Current (Amps) VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) v IC IC - Collector Current (Amps) VBE(on) v IC VBE - (Volts) VBE(sat) - (Volts) 0.4 0.001 0.01 0.1 10 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 IC - Collector Current (Amps) hFE v IC hFE - Normalised Gain 1.0 0.5 2.0 1.5 VCE=5VIC/IB=100 0.6 0.001 0.01 0.1 1 10 IC/IB=100 1.0 0.5 2.0 1.5 0.001 0.01 0.1 1 10 VCE=5V -55°C +25°C +100°C +175°C -55°C +25°C +100°C +175°C -55°C +25°C +100°C -55°C +25°C +100°C +175°C Maximum transient thermal impedance Thermal Resistance (°C/W) 100m 100ms IC - Collector Current (A) DC VCE - Collector Emitter Voltage (V) Safe Operating Area 10ms 1ms 100us 1 10 100 10m 100m FMMT38A FMMT38B FMMT38C 3 - 101 3 - 100