FMG200N04Z GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
F eatures S GT LV MOSFET technology Excellent Qg*Ron product(FOM) Extremely low on-resistance(Ron) A pplication B attery management High current switching UPS T op View B ottom View Pin Configuration K ey Performance Parameters Sy mbol Parameter Rating Units VDS D rain-Source Voltage 40 V VGS Ga te-Source Voltage ±20 V I D@Tc=25℃ Continuous Drain Current, VGS= 10V 200 A I D@Tc=100℃ Continuous Drain Current, VGS= 10V 145 A I DM Pulsed Drain Current 800 A E AS Single Pulse Avalanche Energy 416 mJ P D@Tc=25℃ Total Power Dissipation 96 W TST G S torage Temperature Range -55 to 150 ℃ Tj O perating Junction Temperature Range -55 to 150 ℃ FMG200N04Z N-Channel MOSFET VD S 40 V Rds (on),typ@Vgs=10V 0.8 mΩ Rds (on),typ@Vgs=4. 5V 1.2 mΩ ID 200 A T hermal Data Sy mbol Parameter Typ Max Units Rθ JA T hermal Resistance Junction-Ambient 42 50 ℃/W Rθ JC T hermal Resistance Junction-Case 1.1 1.3 ℃/W
Electrical Characteristics (T J =25 ℃, Unless otherwise noted) Diode Characteristics Symbol Parameter Conditions Min Typ Max Units Is Continuous Source Current VG=VD=0V, Force Current -- -- 200 A Ism Pulsed Source Current -- -- 800 A Trr Body Diode Reverse Recovery Time IF=50A, di/dt=100A/us -- 80 -- ns Qrr Body Diode Reverse Recovery Charge -- 190 -- nC V SD Diode Forward Voltage VGS=0V, I S Note: Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width≦300us, duty cycle≦2%. Essentially independent of operating temperature. 4.The EAS data shows Max. rating. The test condition is V DD =20V, V GS =10V , L=0.5mH. Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. BVDSS Drain-Source Breakdown Voltage 40 -- -- V V GS =0V, I D =250uA R DS(ON) Static Drain-Source On-Resistance -- 0.8 1 mΩ V GS =10V, I D =50A -- 1.2 1.5 V GS =4.5V, I D =20A V GS(th) Gate Threshold Voltage 1 1.6 2.5 V V GS DS , I D =250uA IDSS Drain-Source Leakage Current -- -- 1 uA V DS =40V, V GS =0V, T J =25℃ -- -- 10 uA V DS =32V, V GS =0V, T J =125℃ IGSS Gate-Source Leakage Current -- -- ±100 nA V GS =±20V, V DS =0V gfs Forward Transconductance -- 110 -- S V DS =20V, I D =50A Rg Gate Resistance -- 4 -- Ω V DS =0V, V GS =0V, f=1MHz Qg Total Gate Charge -- 86.9 -- nC V DS =20V, V GS =5V, I D =50A Qgs Gate-Source Charge -- 18 -- Qgd Gate-Drain Charge -- 15.4 -- Td (on) Turn-On Delay Time -- 26 -- ns V DD =20V, V GS =10V, R G =3Ω I D =50A T r Rise Time -- 19 -- Td (off) Turn-Off Delay Time -- 85 -- T f Fall Time -- 19 -- Ciss Input CapacitanceS -- 5609 -- pF V DS =20V, V GS =0V, f=1MHz Coss Output Capacitance -- 2043 -- Crss Reverse Transfer Capacitance -- 128 -- FMG200N04Z N-Channel MOSFET
Typical Performance Characteristics Fig1 Output Characteristics Fig2 Normalized R DSON vs. T J Fig3 Gate Charge Waveform Fig4 Transfer Characteristics Fig5 Rds(on) vs. Drain Current and Gate Voltage Fig6 Rds(on) vs. Gate Voltage Fig7 Capacitance Characteristics Fig8 Drain Current Derating FMG200N04Z N-Channel MOSFET
Fig9 Power Dissipation Fig10 Source-Drain Diode Forward Characteristics Fig11 Normalized Threshold Voltage vs. T J Fig12 Normalized Breakdown Voltage vs. T J Typical Performance Characteristics Fig13 Maximum Safe Operation Area Fig14 Normalized Transient Impedance FMG200N04Z N-Channel MOSFET
Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform FMG200N04Z N-Channel MOSFET
Plastic surface mounted package; 8 leads PDFN506 PACKAGE OUTLINE FMG200N04Z N-Channel MOSFET