FMA411 FILTRONIC | Alldatasheet

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Technical content

Phone: +1 408 850-5790 www.filcs.com Revised: 7/19/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • PERFORMANCE ♦ 8.5 – 14.0 GHz Operating Bandwidth ♦ 2.6 dB Noise Figure ♦ 18 dB Small-Signal Gain ♦ 17.5 dm Output Power ♦ +6V Single Bias Supply ♦ Adjustable Operating Current ♦ DC De-coupled Input and Output Ports
  • DESCRIPTION AND APPLICATIONS The FMA411 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 8.5 to 14.0 GHz bandwidth. The amplifier requires a single +6V s upply and one off-chip component for supply de-coupling; the supply voltage can be varied from +3 V to +6V if needed. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. Op erating current can be adjusted using the Source resistor ladders located along the bottom edge, by bonding a particular pad to ground, in order to optimize noise or power performance. Typical applications include low-noise front end amplifiers, and general gain block utilizations in X- band. The amplifier is unconditionally stab le over all load states (-45 to +85 °C), and conditionally stable if the input port is open-circuited.
  • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units Operating Frequency Bandwidth BW 8.5 14 GHz Small Signal Gain S 21 V DD = +6 V IDD ≈ 60% IDSS 16.5 18 21 dB Saturated Drain Current (see Note) IDSS V DD = +3V 210 230 270 mA Operating Current I DQ V DD = +6V 125 140 165 mA Small Signal Gain Flatness ∆S21 VDD = +6 V IDD ≈ 60% IDSS ± 0.8 ± 1.2 dB Noise Figure NF V DD = +6 V IDD ≈ 60% IDSS 2.6 3.5 dB 3rd-Order Intermodulation Distortion IMD V DD = +6 V IDD ≈ 60% IDSS POUT = +6 dBm SCL -46 dBc Power at 1dB Compression P 1dB V DD = +6 V IDD ≈ 60% IDSS 16 17.5 dBm Input Return Loss S 11 V DD = +6 V IDD ≈ 60% IDSS -10 -6 dB Output Return Loss S 22 V DD = +6 V IDD ≈ 60% IDSS -16 -10 dB Reverse Isolation S 12 VDD = +6 V IDD ≈ 60% IDSS -40 -35 dB
  • NOTE: Continuous operation at IDSS is not recommended

Phone: +1 408 850-5790 www.filcs.com Revised: 7/19/04 Fax: +1 408 850-5766 Email: sales@filcsi.com ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Min Max Units Supply Voltage V DD For any operating current 8 V Supply Current I DD For VDD < 7V 75% I DSS mA RF Input Power P IN For standard bias conditions 0 dBm Storage Temperature T STG Non-Operating Storage -40 150 ºC Total Power Dissipation P TOT See De-Rating Note below 980 mW Gain Compression Comp. Under any bias conditions 5 dB Simultaneous Combination of Limits2 2 or more Max. Limits 80 % 1TAmbient = 22°C unless otherwise noted 2Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes:

  • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
  • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: P DC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
  • Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 0.6 - (0.004W/°C) x TCARRIER where TCARRIER = carrier or heatsink temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55 °C carrier temperature: PTOT = 0.6 - (0.004 x (55 – 22)) = 0.47W
  • For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with some degradation in thermal de-rating performance (PTOT = 550mW)
  • Note on Thermal Resistivity: The nominal value of 250 °C/W is stated for the input stage, which will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175°C/W.
  • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised duri ng handling. Proper Electrostatic Discharge (ESD) precautions should be observed at al l stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1- 1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.

Phone: +1 408 850-5790 www.filcs.com Revised: 7/19/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • MECHANICAL OUTLINE: Notes: 1) All units are in microns, unless otherwise specified. 2) All bond pads are 100x100 µm 3) Bias pad (VDD) size is 100x100 µm2