FMA3016-QFN FILTRONIC | Alldatasheet

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3.5GHz High Power Amplifier for WiMAX applications Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v3.1 FMA3016 -QFN F EATURES :

  • 3.5GHz WiMAX power amplifier
  • 17dB gain
  • 2.5% EVM with 30dBm transmit power
  • 10% PAE with 30dBm transmit power
  • 10W P sat
  • 20 lead air-cavity QFN with Cu lead frame GENERAL DESCRIPTION : FMA3016-QFN is a high power packaged MMIC amplifier for 3.5GHz WiMAX applications. This device exhibits 17dB of gain, has a P sat of greater than 10W and 2.5% EVM with 10% PAE at 30dB transmit power with a 64 QAM OFDM signal. The part is packaged in a 20 lead air-cavity QFN (8x6x1.4mm) with a copper lead frame for enhanced thermal performance. FMA3016-QFN E VALUATION BOARD : T YPICAL APPLICATIONS :
  • WiMAX
  • 802.16 Broadband wireless ELECTRICAL SPECIFICATIONS : PARAMETER CONDITIONS MIN TYP MAX UNITS Frequency Range 3.4 3.6 GHz Gain 17 dB Gain variation over temperature -40 to +85 deg C Base Plate Temperature ± 1.5 dB Input Return Loss 12 dB Output Return Loss 10 dB EVM @30dBm transmit power OFDM signal 2.5 % PAE @30dBm transmit power OFDM signal 9 10 % Output power at P 1dB CW conditions 38 dBm Output IP3 CW conditions 50 dBm ACP @30dBm P out 7MHz BW, Adjacent Channel Power measured in a 1MHz BW, offset by 7.5MHz from the centre frequency -52 dBc Noise Figure 10 dB Stability Unconditional across all frequencies with appropriate decoupling networks VD1 , V D2 8 10 V VG1 , V G2 Class AB to obtain optimum linearity -1.2 -0.5 V IDS 1.2 A

Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3016 -QFN ABSOLUTE MAXIMUM RATINGS : P ACKAGE PIN OUT Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PACKAGE LAYOUT : THERMAL INFORMATION Parameter Test Conditions Tch (°C) Rθ JC (°C/W) Rθ JC Thermal Resistance (Channel to backside of package) Vd = 8 V I D = 1.2 A Pdiss = 9.6 W 140 6 PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +32dBm Drain Bias Voltage +15V Storage Temp T stor -55° C to +150° C

Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3016 -QFN TYPICAL MEASURED PERFORMANCE ON-WAFER : Note: Measurement Conditions V D1 , V D2 = 10V & ID=700mA, T AMBIENT = 25° C 3 3.2 3.4 3.6 3.8 4 Frequency (GHz) Input Return Loss -25 -20 -15 -10

3.6 GHz

-18.7 dB 3.4 GHz -18.13 dB S11 3 3.2 3.4 3.6 3.8 4 Frequency (GHz) Gain 18.11 dB

3.4 GHz

17.63 dB S21 0.045 5.04 10 15 20 Frequency (GHz) Reverse Isolation -120 -100 -80 -60 -40 S12 3 3.2 3.4 3.6 3.8 4 Frequency (GHz) Output Return Loss -20 -15 -10 -11.44 dB -12.74 dB S22

Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3016 -QFN TYPICAL MEASURED PERFORMANCE EVALUATION BOARD : NOTE : M EASUREMENT CONDITIONS VD1 , V D2 = 8V, T AMBIENT = 25° C EVM and Current Over Output Power 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 Output Power Current (mA) 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 EVM (%) Id1 (mA) Id2 (mA) EVM (%) 0.5 1.5 2.5 3.5 4.5 Frequency (GHz) EVM (%) Board1 Board2 Board3

Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3016 -QFN EVALUATION BOARD COMPONENT LAYOUT : BILL OF MATERIALS : LABEL COMPONENT Board Preferred evaluation board material is 30-mil thick ROGERS RT4350. All RF tracks should be 50-ohm characteristic material P6, P7 SMA RF edge connector P1, P2, P3, P4, DC connector C1, C2, C3, C4, C5, C6, C7, C8, C9, Capacitor, 10uF, 0603 C10,C11, C12,C13, C14,C15, C16,C17, C18, C19 Capacitor, 100pF, 0603 Q1 FMA3016-QFN V D1 V G2 V D2 V D1 V G1 V G2 V D2 MLI N ID =TL1 W =Cap_Int er um L =1 500 u m MSUB="MSUB1" ML IN ID=T L 2 W=Cap _Inter u m L= 150 0 um MSUB= " M SUB1" PORT P=1 Z =50 O hm PORT P=2 Z = 50 Oh m Vg1 Vd1 Vg2 Vd2 Vd1 Vg2 Vd2 10uF 10uF 10uF 10uF 10uF 10uF 10uF 100pF 100pF 100pF 100pF 100pF 100pF 100pF 100pF

Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3016 -QFN PREFERRED ASSEMBLY INSTRUCTIONS : Please contact Filtronic Compound Semiconductors for further details. HANDLING PRECAUTIONS : To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250- 500 V) as defined in JEDEC Standard No. 22- A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. DISCLAIMERS : This product is not designed for use in any space based or life sustaining/supporting equipment. PART NUMBER DESCRIPTION FMA3016-QFN Packaged MMIC