FMA3007

FMA3007 FILTRONIC | Alldatasheet

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2-20GHZ BROADBAND MMIC AMPLIFIER Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Preliminary Datasheet v2.1 FMA3007 FEATURES:

• Cascode Configuration
• 10dB Gain
• pHEMT Technology
• AGC control with gate bias
• Input Return Loss <-15dB
• Output Return Loss <-10dB GENERAL DESCRIPTION: The FMA3007 is a high performance 2-20GHz Gallium Ar senide m onolithic tr avelling wave amplifier. It is s uitable f or us e in br oadband communication, instrumentation and electronic warfare app lications. Setting a s econd g ate bias vo ltage be tween +1 .0V an d –1.0 V c an control th e ga in. Us ing a n on c hip d iode f or temperature m onitoring t he ga in c an be automatically controlled. FUNCTIONAL SCHEMATIC: VDD RF Input RF Output VG TYPICAL APPLICATIONS:
• Test Instrumentation
• Electronic Warfare
• Broadband Communication Infrastructure ELECTRICAL SPECIFICATIONS: PARAMETER CONDITIONS (VDD=3.5V) MIN TYP MAX UNITS Small Signal Gain 2-20GHz 10 dB Input Return Loss 2-20GHz -15 dB Output Return Loss 2-20GHz -11 dB Reverse Isolation 2-20GHz <-30 dB Output Power at 1dB compression point 10GHz 18GHz dBm dBm Noise Figure 2-20GHz 4.5 dB Gate Voltage For Id=70mA -0.37 V PARAMETER CONDITIONS (VDD=7V) MIN TYP MAX UNITS Small Signal Gain 2-20GHz 11.5 dB Input Return Loss 2-20GHz -15 dB Output Return Loss 2-20GHz -11 dB Reverse Isolation 2-20GHz <-30 dB Output Power at 1dB compression point 10GHz 18GHz dBm dBm Noise Figure 2-20GHz 4.5 dB Gate Voltage For Id=135mA -0.26 V Note: TAMBIENT = +25°C, Z0 = 50Ω Website: www.filtronic.com

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Preliminary Datasheet v2.1 FMA3007 ABSOLUTE MAXIMUM RATINGS: Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin (Table cell) +25dBm Gate Voltage VG1 -2V Drain Voltage VDD +10V Total Power Dissipation Ptot tbd Gain Compression Comp tbd Thermal Resistivity θJC 0.66°C/W Operating Temp Toper -40°C to +85°C Storage Temp Tstor -55°C to +150°C PAD REF PAD NAME

DESCRIPTION

(µm) A RF in RF in (140, 1153) B VDP (+Ve) Temperature Monitoring Diode (2097, 140) C VDN (-Ve) Temperature Monitoring Diode (2321, 140) D GND Ground (2545, 140) E VG1 Gate Control (2769, 140) F VG2 Gain Control (2993, 140) G RF Out RF Out (3004, 1141) H VDD Drain Voltage (2540, 1650) I GND Ground (2792, 1650) I H A G FC EDB DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 3150 x 1780 100 220 120 x 120 Website: www.filtronic.com

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3007 TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS: Note: Measurement Conditions VG1= -0.26V, ID= 130mA, VDD= 3.5V, VG2=+1V, TAMBIENT = 25°C Gain Input Return Loss 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Gain (dB) 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -40 -30 -20 -10 Input Return Loss (dB) Output Return Loss R everse Isolation 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -40 -30 -20 -10 Output Return Loss (dB) 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -60 -40 -20 Reverse Isolation (dB) Output Power at P1dB Compression Point vs Freq Output Power (dBm) 2015105 Frequency (GHz)

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3007 TYPICAL MEASURED PERFORMANCE FOR ON WAFER TEMPERATURE MEASUREMENTS: Note: Measurement Conditions VG1= -0.26V, VDD= 3.5V, VG2= +1V, TAMBIENT = -40°C to +85°C Gain Input Return Loss 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) 15Gain (dB) 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -40 -30 -20 -10 Input Return Loss (dB) 1.00 1.00 -40ºC +85ºC 1.00 1.00 -40ºC +85ºC Output Return Loss R everse Isolation 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -40 -30 -20 -10 Output Return Loss (dB) 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) -60 -40 -20 Reverse Isolation (dB) 1.00 1.00 -40ºC +85ºC 1.00 1.00 -40ºC +85ºC

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3007 BIASING CIRCUIT SCHEMATIC: 100nF 100nF 100pF VG1 100pF RF Output 100pF 100nF VG2 RF Input VDD ASSEMBLY DIAGRAM: To Evaluation Board via an 0402 Surface Mounted capacitor 100pF Capacitors 100pF Capacitor To Evaluation Board via an 0402 Surface Mounted capacitor Note: Bond Wire length should be kept to a minimum BILL OF MATERIALS: COMPONENT All RF tracks should be 50Ω characteristic material Capacitor, 100pF, chip capacitor Capacitor, 100pF, 0402

Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com Preliminary Datasheet v2.1 FMA3007 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs de vices ar e f ragile and s hould b e handled with gr eat c are. Specially des igned collets should be used where possible. The r ecommended die attac h is gol d/tin eutectic s older un der a n itrogen a tmosphere. Stage t emperature s hould b e 2 80-290°C; maximum ti me at te mperature is one m inute. The r ecommended wir e bond m ethod is thermo-compression w edge bonding with 0.7 or 1.0 m il ( 0.018 or 0.025 m m) gold wire. Stage temperature should be 250-260°C. Bonds s hould b e m ade f rom the di e f irst a nd then to the m ounting s ubstrate or package. The physical length of the bondwires should be minimised es pecially when m aking RF or ground connections. HANDLING PRECAUTIONS: To avoi d damage to the d evices c are s hould be ex ercised dur ing h andling. Proper Electrostatic D ischarge (ESD) pr ecautions should be obs erved a t al l s tages of s torage, handling, as sembly, a nd tes ting. T hese devices should be tr eated as Class 1A ( 0-500 V) as def ined in J EDEC Stan dard N o. 22- A114. F urther i nformation on E SD c ontrol measures can be f ound in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including S- parameters, nois e d ata an d l arge-signal models are available on request. DISCLAIMERS: This pr oduct is n ot d esigned f or us e in a ny space bas ed or l ife s ustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FMA3007 Die in Waffle-pack (Gel-pak available on request)