FMA219 FILTRONIC | Alldatasheet

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Technical content

Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/22/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports
  • DESCRIPTION AND APPLICATIONS The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V s upply and one off-chip component for supply de-coupling. Both the inpu t and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. Typical applications include low-noise front end amplifiers, and general gain block utilizations in X- band. The amplifier is unconditionally stab le over all load states (-45 to +85 °C), and conditionally stable if the input port is open-circuited.
  • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units Operating Frequency Bandwidth BW V DD = +3 V IDD = IOP 7 11 GHz Small Signal Gain S 21 V DD = +3 V IDD = IOP 19 21 23 dB Operating Current I OP No RF input 50 65 85 mA Small Signal Gain Flatness ∆S21 VDD = +3 V IDD = IOP ±0.5 ±0.8 Noise Figure NF V DD = +3 V, IDD = IOP 1.5 1.7 dB 3rd-Order Intermodulation Distortion IMD V DD = +3 V, IDD = IOP POUT = +1.5 dBm SCL -47 dBc Power at 1dB Compression P 1dB V DD = +3 V 11.5 12.5 dBm Input Return Loss S 11 V DD = +3 V IDD = IOP -7 -3 dB Output Return Loss S 22 V DD = +3 V IDD = IOP -16 -10 dB Reverse Isolation S 12 VDD = +3 V IDD = IOP -40 -30 dB

Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/22/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Min Max Units Supply Voltage V DD For any operating current 6 V Supply Current I DD For VDD < 5V 100 mA RF Input Power P IN For standard bias conditions -5 dBm Storage Temperature T STG Non-Operating Storage -40 150 ºC Total Power Dissipation P TOT See De-Rating Note below 600 mW Gain Compression Comp. Under any bias conditions 5 dB Simultaneous Combination of Limits2 2 or more Max. Limits 80 % 1TAmbient = 22°C unless otherwise noted 2Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes:
  • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
  • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: P DC: DC Bias Power PIN: RF Input Power POUT: RF Output Power
  • Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 0.6 - (0.004W/°C) x TCARRIER where TCARRIER = carrier or heatsink temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55 °C carrier temperature: PTOT = 0.6 - (0.004 x (55 – 22)) = 0.47W
  • For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with some degradation in thermal de-rating performance (PTOT = 550mW)
  • Note on Thermal Resistivity: The nominal value of 250 °C/W is stated for the input stage, which will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175°C/W.
  • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised duri ng handling. Proper Electrostatic Discharge (ESD) precautions should be observed at al l stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1- 1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
  • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filt ronic Sales Representative or directly from the factory.

Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/22/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • ASSEMBLY DRAWING Notes:
  • Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic or thermosonic bonding is not recommended.
  • The recommended die attach is conductive epoxy, following the manufacturer’s recommended curing procedure.
  • For eutectic die attach the maximum time at 280-300°C is 60 seconds, and should be kept to a minium.
  • The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical. All information and specifications subject to change without notice. 75µm nominal gap on each side 250µm Au ribbon recommended 25µm dia. Au wire (x2) on input and output ports, less than 1000µm length each To +VDD Input and output thin film substrates with 50Ω microstrip transmission lines. Substrate thickness 250µm or thinner is recommended. 150pF capacitor

Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/22/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • TYPICAL RF PERFORMANCE (VDD = +3V, IDD = IOP)
  • TYPICAL NOISE FIGURE PERFORMANCE ¾ Multiple traces show typical die variation across a 150mm (6 in.) wafer. Note: Effect of typi cal bondwire inductance (25 µm dia., 1000 µm length, 2 ea. on input and output ports) is less than 0.5 dB decrease in S 21 (11GHz), and no measurable effect on noise figure. FMA219BF NOISE FIGURE 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 789 1 0 1 1 Frequency (GHz) Noise Figure (dB) FMA219 FREQUENCY RESPONSE -20 -16 -12 5 6 7 8 9 1 01 11 21 31 41 5 Frequency [GHz] SSG, Input / Output Return Loss (dB) S21 S11 S22

Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/22/04 Fax: +1 408 850-5766 Email: sales@filcsi.com

  • POWER TRANSFER CHARACTERISTIC
  • TYPICAL 3 RD-ORDER INTERMODULATION PERFORMANCE FMA219 ¾ Equivalent output IP3 performance exceeds 24 dBm, input IP3 is typically ≥ +2 dBm. FMA219BF POWER TRANSFER CHARACTERISTIC 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 Pin (dBm) Output Power (dBm) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Compression Point, (dB) Pout@7GHz Pout@9GHz Pout@11GHz Comp@7GHz Comp@9GHz Comp@11GHz IM PRODUCTS vs. INPUT POWER AT 9.0 GHz 1.0 3.0 5.0 7.0 9.0 11.0 Input Power (dBm) Ou tp ut Po we r B -45.00 -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 IM Pr od uc ts Bc Pout Im3, dBc