FM600TU-2A | DigiCamel IC Datasheet

Online Datasheet

Read FM600TU-2A online.

FM600TU-2A_09 MITSUBISHI | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 5

Technical content

MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM600TU-2A APPLICATION AC motor control of forklift (battery power source), UPS

Insulated Type
6-elements in a pack
NTC Thermistor inside
UL Recognized Yellow Card No.E80276 File No.E80271 Feb. 2009 WUV NP (SCREWING DEPTH) Tc measured point P N (7)GUP (1)SUP (10)GUN UVW (4)SUN (8)GVP (1)SUP (7)GUP (13)TH1 (2)SVP (8)GVP (3)SWP (9)GWP (4)SUN (10)GUN (5)SVN (11)GVN (6)SWN A B (12)GWN (14)TH2 (2)SVP (11)GVN (5)SVN (9)GWP (3)SWP (12)GWN (6)SWN CIRCUIT DIAGRAM (13) NTC (14) 6.5 (15.8) 9.2 (8.7) 7 7 70.915.2 3.96 5-6.5 202020 A B 110 97 ʶ 35 ʶ ʴ ʵ 16.5 16 1632 6.5(6)(6) 22.75 (17.5)(14.5) 9.1 (6) (14.5) 6.5 22.57 LABEL 67 ʶ 11.5 32 3216.5 1414 П ./654 .06/5*/()0-&4 Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 100 ±20 300 600 300 300 600 960 1300 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE V V A rms A A Arms A W W V rms N • m N • m g Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight G-S Short D-S Short T C’ = 133°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value UnitRatings V DSS VGSS ID(rms) IDM IDA IS(rms)*1 ISM*1 PD*4 PD*4 Tch Tstg Viso ConditionsItemSymbol ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) *1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (T ch) does not exceed T ch max rating. *3: Case Temperature (Tc’) measured point is just under the chips. If use this value, R th(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTh is thermistor temperature. *6: *7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Min. 4.7 mA V µA mΩ V mΩ nF nC ns ns µC V K/W Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance VDS = VDSS, VGS = 0V ID = 30mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 300A VGS = 15V ID = 300A VGS = 15V ID = 300A terminal-chip VDS = 10V VGS = 0V VDD = 48V, ID = 300A, VGS = 15V VDD = 48V, ID = 300A, VGS ± 15V RG = 4.2Ω, Inductive load IS = 300A IS = 300A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to fin, Thermal grease Applied*8 (1/6 module) Case to fin, Thermal grease Applied*3, *8 (1/6 module) UnitLimits IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) ConditionsItemSymbol Typ. 0.8 1.37 0.24 0.41 0.7 1.0 1800 6.2 0.1 0.09 Max. 7.3 1.5 1.1 0.33 110 400 600 600 400 250 1.3 0.13 0.096 Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) Min. UnitLimitsConditionsParameterSymbol Typ. 100 4000 Max. kΩ K Resistance B Constant T Th = 25°C*5 Resistance at TTh = 25°C, 50°C*5 RTh*6 B*6 NTC THERMISTOR PART R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K] B = In( )/( )R25 R50 T25 T50

Feb. 2009 MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES 200 100 400 300 500 600 CAPACITANCE (nF) DRAIN-SOURCE VOLTAGE VDS (V) 500 400 100 300 200 600 579 1 1 13 15 0.4 0.8 1.2 1.6 2.0 048 1 2 1 6 2 0 04 0 8 0 120 16020 60 100 140 0 04 0 8 0 120 16020 60 100 140 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 0.4 0.8 1.2 1.6 0.2 0.6 1.0 1.4 1.8 VGS = 20V Tch = 25°C Tch = 25°C VGS = 12V VGS = 15V 15V 12V 10V ID = 300A ID = 300A ID = 150A ID = 600A VDS = 10V Tch = 25°CTch = 125°C VDS = 10V ID = 30mA Ciss Coss Crss VGS = 0V TRANSFER CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (mΩ) CHANNEL TEMPERATURE Tch (°C) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) GATE THRESHOLD VOLTAGE VGS(th) (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) Chip Chip Chip Chip

Feb. 2009 MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE 0 500 1000 1500 2000 2500 102 103 101 10223 5 7 10323 5 7101 102 103 101 102 103 104 10–2 10–1 100 101 101 10223 5 7 10323 5 7 10–2 10–1 100 101 102 10 20 30 4051 5 2 53 54 5 01 0 2 0 3 0 4 051 5 2 5 3 5 4 5 VGS = 0V Tch = 25°C Tch = 125°C VDD = 24V VDD = 48V ID = 300A Conditions: VDD = 48V VGS = ±15V RG = 4.2Ω Tch = 125°C Inductive load td(off) Conditions: V DD = 48V VGS = ±15V RG = 4.2Ω Tch = 125°C Inductive load Esw(off) Esw(on) Err Conditions: V DD = 48V VGS = ±15V ID = 300A Tch = 125°C Inductive load Esw(off) Esw(on) Err td(on) tf tr Conditions: V DD = 48V VGS = ±15V ID = 300A Tch = 125°C Inductive load td(off) td(on) tf tr GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) GATE CHARGE QG (nC) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE CURRENT IS (A) SOURCE-DRAIN VOLTAGE VSD (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) DRAIN CURRENT ID (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING LOSS (mJ/pulse) DRAIN CURRENT ID (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) Chip

Feb. 2009 MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE 100 101 102 103 101 10223 5 7 10323 5 7 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Conditions: VDD = 48V VGS = ±15V RG = 4.2Ω Tch = 25°C Inductive load trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) Irr (A), trr (ns) SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) TIME (s) Single pulse T ch = 25°C Per unit base = Rth(ch-c) = 0.13K/W CHIP LAYOUT 1371 12 6 WUV NP (110) (97) 90.8 57.8 24.8 49.2 29.2 (90) (80) (67) 47.2 51.8 LABEL SIDE 5S61 5S6/ 5S71 5S7/ 5S81 5S8/

Product Information

FM600TU-2A specifications and overview.

Summary

MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE

Description

MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE

Source title FM600TU-2A_09 Datasheet(PDF) - Mitsubishi Electric Semiconductor

Related Parts

More parts from the same family.

Browse manufacturer