FM300N09D9 GWSEMI | Alldatasheet

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Technical content

Features

Excellent Qg*Ron product (FOM) Extremely low on-resistance (Ron) Application Battery management High current switching UPS Pin Configuration Key Performance Parameters Symbol Parameter Rating Units V DS Drain-Source Voltage 85 V V GS Gate-Source Voltage ±20 V ID@Tc=25℃ Continuous Drain Current, V GS =10V 300 A ID@Tc=100℃ Continuous Drain Current, V GS =10V 220 A IDM Pulsed Drain Current 1200 A EAS Single Pulse Avalanche Energy 1650 mJ PD@Tc=25℃ Total Power Dissipation 312 W T STG Storage Temperature Range -55 to 150 ℃ T j Operating Junction Temperature Range -55 to 150 ℃ FM300N09D9 V DS V R ds(on),typ gs =10V 1.4 mΩ I D 300 A Top View Bottom View Thermal Data Symbol Parameter Typ Max Units R θJA Thermal Resistance Junction-Ambient 58 62.5 ℃/W R θJC Thermal Resistance Junction-Case 0.32 0.4 ℃/W

Electrical Characteristics

(TJ=25 ℃, Unless otherwise noted) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. BVDSS Drain-Source Breakdown Voltage 85 -- -- V V GS =0V, I D =250uA R DS(ON) Static Drain-Source On- Resistance -- 1.4 2 mΩ V GS =10V, I D =80A V GS(th) Gate Threshold Voltage 2 3 4 V V GS DS , I D =250uA I DSS Drain-Source Leakage Current -- -- 1 uA V DS =85V, V GS =0V, T J =25 -- -- 10 uA V DS =64V, V GS =0V, T J =125℃ I GSS Gate-Source Leakage Current -- -- ±100 nA V GS =±20V, V DS =0V gfs Forward Transconductance -- 204 -- S V DS =10V, I D =80A Rg Gate Resistance -- 1.7 -- Ω V DS =0V, V GS =0V, f=1MHz Qg Total Gate Charge 2,3 -- 216.3 -- nC V DS =40V, V GS =10V, I D =80A Qgs Gate-Source Charge 2,3 -- 69.1 -- Qgd Gate-Drain Charge 2,3 -- 58.7 -- Td (on) Turn-On Delay Time 2,3 -- 38 -- ns V DD =40V, V GS =10V, R G =3Ω I D =50A T r Rise Time 2,3 -- 123 -- Td (off) Turn-Off Delay Time 2,3 -- 116 -- T f Fall Time 2,3 -- 136 -- Ciss Input Capacitance 13380 -- pF V DS =40V, V GS =0V, f=1MHz Coss Output Capacitance -- 2403 -- Crss Reverse Transfer Capacitance -- 72 -- Diode Characteristics Symbol Parameter Conditions Min Typ Max Units Is Continuous Source Current V G D =0V, Force Current -- -- 300 A Ism Pulsed Source Current -- -- 1200 A Trr Body Diode Reverse Recovery Time IF=30A, di/dt=100A/us -- 120 -- ns Qrr Body Diode Reverse Recovery Charge -- 360 -- nC V SD Diode Forward Voltage V GS =0V, I S =80A, T J =25℃ -- -- 1.3 V Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width≦300us, duty cycle≦2%. 3. Essentially independent of operating temperature. 4. The EAS data shows Max. rating. The test condition is V DD =40V, V GS =10V, L=0.5mH. FM300N09D9

Typical Performance Characteristics Fig1 Output Characteristics Fig2 Normalized R DSON vs. T J Fig3 Gate Charge Waveform Fig4 Transfer Characteristics Fig5 Rds(on) vs. Drain Current and Gate Voltage Fig6 Rds(on) vs. Gate Voltage Fig7 Capacitance Characteristics Fig8 Drain Current Derating FM300N09D9

Fig9 Power Dissipation Fig10 Source-Drain Diode Forward Characteristics Fig11 Normalized Threshold Voltage vs. T J Fig12 Normalized Breakdown Voltage vs. T J Fig13 Maximum Safe Operation Area Fig14 Normalized Transient Impedance FM300N09D9

Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform FM300N09D9

Plastic surface mounted package; 8 leads TOLL PACKAGE OUTLINE Front View FM300N09D9