FM200TU-3A

FM200TU-3A_09 MITSUBISHI | Alldatasheet

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MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A APPLICATION AC motor control of forklift (battery power source), UPS

• Insulated Type
• 6-elements in a pack
• NTC Thermistor inside
• UL Recognized Yellow Card No.E80276 File No.E80271 Feb. 2009 OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm WUV NP (SCREWING DEPTH) Tc measured point P N (7)GUP (1)SUP (10)GUN UVW (4)SUN (8)GVP (1)SUP (7)GUP (13)TH1 (2)SVP (8)GVP (3)SWP (9)GWP (4)SUN (10)GUN (5)SVN (11)GVN (6)SWN A B (12)GWN (14)TH2 (2)SVP (11)GVN (5)SVN (9)GWP (3)SWP (12)GWN (6)SWN CIRCUIT DIAGRAM (13) NTC (14) 6.5 (15.8) 9.2 (8.7) 7 7 70.915.2 3.96 5-6.5 202020 A B 110 97 ʶ 35 ʶ ʴ ʵ 16.5 16 1632 6.5(6)(6) 22.75 (17.5)(14.5) 9.1 (6) (14.5) 6.5 22.57 LABEL 67 ʶ 11.5 32 3216.5 1414 П ./654 .06/5*/()0-&4 Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1

Feb. 2009 150 ±20 100 200 100 100 200 410 560 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE V V A rms A A Arms A W W V rms N • m N • m g Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight G-S Short D-S Short T C’ = 122°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value UnitRatings V DSS VGSS ID(rms) IDM IDA IS(rms)*1 ISM*1 PD*4 PD*4 Tch Tstg Viso ConditionsItemSymbol Min. 4.7 mA V µA mΩ V mΩ nF nC ns ns µC V K/W Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance V DS = VDSS, VGS = 0V ID = 10mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 100A VGS = 15V ID = 100A VGS = 15V ID = 100A terminal-chip VDS = 10V VGS = 0V VDD = 80V, ID = 100A, VGS = 15 VDD = 80V, ID = 100A, VGS ± 15V RG = 13Ω, Inductive load IS = 100A IS = 100A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to heat sink, Thermal grease Applied*8 (1/6 module) Case to heat sink, Thermal grease Applied*3, *8 (1/6 module) UnitLimits IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) ConditionsItemSymbol Typ. 4.8 9.1 0.48 0.91 1.2 1.68 820 6.5 0.1 0.09 Max. 7.3 1.5 6.6 0.66 400 250 450 200 200 1.3 0.30 0.22 Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Min. UnitLimitsConditionsParameterSymbol Typ. 100 4000 Max. kΩ K Resistance B Constant TTh = 25°C*5 Resistance at TTh = 25°C, 50°C*5 RTh*6 B*6 ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) NTC THERMISTOR PART *1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (T ch) does not exceed T ch max rating. *3: Case Temperature (Tc’) measured point is just under the chips. If use this value, R th(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTh is thermistor temperature. *6: *7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K] B = In( )/( )R25 R50 T25 T50

Feb. 2009 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE 150 100 200 579 1 1 13 15 0.5 1.0 1.5 2.0 2.5 3.0 048 1 2 1 62 0 04 0 8 0 120 16020 60 100 140 0 04 0 8 0 120 16020 60 100 140 10–1 2 10035 7 2 10135 7 2 10235 7 120 160 200 10–1 100 101 102 VGS = 20V Tch = 25°C Tch = 25°C VGS = 12V VGS = 15V 15V 12V 10V ID = 100A ID = 100A ID = 50A ID = 200A VDS = 10V Tch = 25°CTch = 125°C VDS = 10V ID = 10mA Ciss Coss Crss VGS = 0V TRANSFER CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (mΩ) CHANNEL TEMPERATURE Tch (°C) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) GATE THRESHOLD VOLTAGE VGS(th) (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) CAPACITANCE (nF) DRAIN-SOURCE VOLTAGE VDS (V) Chip Chip Chip Chip PERFORMANCE CURVES

Feb. 2009 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE 0 200 400 600 800 1200 1000 102 103 101 10223 5 7 10323 5 7101 102 103 101 102 103 104 10–2 10–1 100 101 101 10223 5 7 10323 5 7 40 80 12020 60 100 140 04 0 8 0 12020 60 100 14010–2 10–1 100 101 VGS = 0V Tch = 25°CTch = 125°CVDD = 60V VDD = 80V ID = 100A Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 125°C Inductive load td(off) Conditions: V DD = 80V VGS = ±15V RG = 13Ω Tch = 125°C Inductive load Eoff Eon Err Conditions: V DD = 80V VGS = ±15V ID = 100A Tch = 125°C Inductive load Eoff Eon Err td(on) tf tr Conditions: V DD = 80V VGS = ±15V ID = 100A Tch = 125°C Inductive load td(off) td(on) tf tr GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) GATE CHARGE QG (nC) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE CURRENT IS (A) SOURCE-DRAIN VOLTAGE VSD (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) DRAIN CURRENT ID (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING LOSS (mJ/pulse) DRAIN CURRENT ID (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) Chip

Feb. 2009 MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE 100 101 102 103 101 10223 5 7 10323 5 7 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 25°C Inductive load trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) Irr (A), trr (ns) SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) TIME (s) Single pulse T ch = 25°C Per unit base = Rth(ch-c) = 0.30K/W CHIP LAYOUT 1371 12 6 WUV NP (110) (97) 90.6 57.6 47.2 24.6 91.6 58.6 25.6 48.4 29.6 (90) (80) (67) 51.8 5S71 5S7/ 5S81 ̩̬̣́ LABEL SIDE 5S61 5S6/