FL20KM-5A

FL20KM-5A MITSUBISHI | Alldatasheet

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Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 l 10V DRIVE 250 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V V A A A W V g FL20KM-5A 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 À À À GATE \` DRAIN ´ SOURCE VGS = 0V VDS = 0V L = 200µH AC for 1minute, Terminal to case Typical value MITSUBISHI PO WER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nc h POWER MOSFET APPLICA TION Inverter type fluorescent light sets, SMPS Parameter ConditionsSymbol Ratings Unit VDSS VGSS ID IDM IDA PD Tch Tstg Viso Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage W eight TO-220FN OUTLINE DRAWING Dimensions in mm MAXIMUM RA TINGS (Tc = 25°C)

Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±30V, VDS = 0V VDS = 250V , VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V , VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V , RGEN = RGS = 50Ω IS = 10A, VGS = 0V Channel to case IS = 20A, VGS = 0V, dis/dt = –100A/µs V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns 250 ±30 2.0 3.0 0.15 1.50 1300 250 200 1.5 300 ±10 1.0 4.0 0.19 1.90 2.0 3.57 0 200 50 100 150 0 4 8 12 16 20 PD = 35W VGS = 20V Tc = 25°C Pulse Test 10V 101 2 10135 7 2 10235 7 2 10335 7 2 100 10-1 tw = 10µs Tc = 25°C Single Pulse 100µs 10ms 100ms 1ms DC 02468 1 0 Tc = 25°C Pulse Test PD = 35W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE V DS (V) VGS = 20V 10V Symbol Parameter Test conditions Limits Min. Typ. Max. Unit V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) Trr Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time ELECTRICAL CHARACTERISTICS (Tch = 25°C) PERFORMANCE CURVES

Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET 0 4 8 12 16 20 ID = 40A Tc = 25°C Pulse Test 10A 20A 0.08 0.16 0.24 0.32 0.40 -1 2 10035 7 2 10135 7 23 10257 VGS = 10V Tc = 25°C Pulse Test 20V 0 4 8 12 16 20 Tc = 25°C VDS = 10V Pulse Test 100 10123 5 7 10223 5 7 100 101 102 Tc = 25°C 75°C 125°C VDS = 10V Pulse Test 103 102 101 2 10235 7 21012 35 71002 35 7 Ciss Coss Crss Tch = 25°C f = 1MHZ VGS = 0V 100 10123 5 772 3 55 102 101 td(off) td(on) tr Tch = 25°C VDD = 150V VGS = 10V R GEN = RGS = 50Ω tf ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE V DS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT I D (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT I D (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN CURRENT I D (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)

Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL20KM-5A HIGH-SPEED SWITCHING USE Nch POWER MOSFET 125°C 75°C 25°C VGS = 0V Pulse Test 0 20 40 60 80 100 VDS = TC = 200V 100V 50V Tch = 25°C ID = 20A 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 10A Pulse Test 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 Single Pulse PDM tw D = T tw T 0.5 0.01 0.2 Duty = 1.0 0.1 0.05 0.02 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) CHANNEL TEMPERATURE Tch ( °C) GATE-SOURCE THRESHOLD VOLTAGE V GS (th) (V) CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch-c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)