FL12KM-7A MITSUBISHI | Alldatasheet

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Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 ¡10V DRIVE 350 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V V A A A W V g MITSUBISHI POWER MOSFET FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A APPLICATION Inverter type fluorescent light sets, SMPS TO-220FN OUTLINE DRAWING Dimensions in mm 15 ± 0.3 14 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.3 3.6 ± 0.3 6.5 ± 0.3 Œ GATE  DRAIN Ž SOURCE VGS = 0V VDS = 0V L = 200µH AC for 1minute, Terminal to case Typical value Parameter Conditions Symbol Ratings Unit VDSS VGSS ID IDM IDA PD Tch Tstg Viso Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight MAXIMUM RATINGS (Tc = 25°C)

Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 350V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 6A, VGS = 10V, RGEN = RGS = 50Ω IS = 6A, VGS = 0V Channel to case V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 350 ±30 2.0 3.0 0.32 1.90 1050 150 160 1.5 ±10 1.0 4.0 0.40 2.40 2.0 3.57 VGS =20V,10V,8V,6V PD = 35W Tc = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) VGS = 20V,10V,8V,6V OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) Tc = 25°C Pulse Test PD = 35W 101 100 101 5 7 102 5 7 103 5 7 101 tw = 10µs TC = 25°C Single Pulse 100µs 100ms 10ms 1ms DC MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 200 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) POWER DISSIPATION PD (W) Symbol Parameter Test conditions Limits Min. Typ. Max. Unit V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance ELECTRICAL CHARACTERISTICS (Tch = 25°C) PERFORMANCE CURVES

Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET 100 101 3 4 5 7 102 3 4 5 100 101 102 TC = 25°C 75°C 125°C VDS =10V Pulse Test Tc = 25°C VDS = 10V Pulse Test 0.2 0.4 0.6 0.8 1.0 10-1 101 100 5 7 102 5 7 2 3 5 7 VGS = 20V Tc = 25°C Pulse Test 10V Tc = 25°C Pulse Test ID = 24A 12A 100 101 5 7 102 5 7 103 2 3 101 102 103 Ciss Coss Crss Tch = 25°C f = 1MHZ VGS = 0V 100 101 3 4 5 102 3 4 5 101 102 td(off) td(on) tr Tch = 25°C VGS = 10V VDD = 150V RGEN = RGS = 50Ω tf ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN CURRENT ID (A)

Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 MITSUBISHI POWER MOSFET FL12KM-7A HIGH-SPEED SWITCHING USE Nch POWER MOSFET 10–2 10–1 100 101 10–42 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7100 2 3 5 7101 2 3 5 7102 10–3 10–2 10–1 D = 1.0 0.5 0.2 0.1 Single Pulse 0.05 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 –50 100 150 VGS = 0V ID = 1mA 1.0 2.0 3.0 4.0 5.0 –50 100 150 VDS = 10V ID = 1mA 10–1 100 101 –50 100 150 VGS = 10V ID = 6A Pulse Test 0.8 1.6 2.4 3.2 4.0 125°C TC = 75°C 25°C VGS = 0V Pulse Test 100 50V VDS = 100V 200V Tch = 25°C ID =12A GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Qg (nC) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE VSD (V) SOURCE CURRENT IS (A) CHANNEL TEMPERATURE Tch (°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) CHANNEL TEMPERATURE Tch (°C) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) PDM tw D= T tw T