FCX591 ZETEX | Alldatasheet
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SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - NOVEMBER 1995 ✪ PARTMARKING DETAIL - P1 COMPLEMENTARY TYPE - FCX491 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -80 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current I C -1 A Base Current I B -200 mA Power Dissipation at T amb=25°C P tot 1W Operating and Storage Temperature Range T j:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V (BR)CBO -80 V IC=-100µA, IE=0 V(BR)CEO -60 V I C=-10mA, IB=0* V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current I CBO -100 nA V CB=-60V Collector -Emitter Cut-Off Current ICES -100 nA V CES=-60V Emitter Cut-Off Current I EBO -100 nA V EB=-4V, IC=0 Saturation Voltages V CE(sat) -0.3 -0.6 V V IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* VBE(sat) -1.2 V I C=-1A, IB=-100mA* Base-Emitter Turn-on Voltage V BE(on) -1.0 V I C=-1A, VCE=-5V* Static Forward Current Transfer Ratio hFE 100 100 300 I C=-1mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* Transition Frequency f T 150 MHz I C=-50mA, VCE=-10V f=100MHz Output Capacitance C obo 10 pF V CB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical Characteristics graphs see FMMT591 datasheet FCX591 3 - 92 C C B E