FCD2004K GWSEMI | Alldatasheet
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DS(ON) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 10 A Pulsed Drain Current IDM * 50 A Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V(BR)DSS RDS(on)TYP ID 20V 10A 7.3 mΩ@4.5V 8.2mΩ@ V Equivalent Circuit mΩ@2.5V9.0 7.8mΩ 3.8V 3.1 7.6 mΩ 4.0V D F NWB2×3-6L Plastic-Encapsulate MOSFETS FCD2004K Dual N-Channel MOSFET The FCD2004K uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA Gate threshold voltage (note 1) VGS(th) VDS =VGS, ID =250µA 0.4 1 V Drain-source on-resistance (note 1) R DS(on) 6.0 9.0 Ω VGS =4.0V, ID =3A 9.3 m Ω VGS =3.8V, ID =3A 9.7 m Ω VGS =3.1V, ID =3A 10.5 m Ω VGS =2.5V, ID =3A 12.5 m Ω Forward tranconductance (note 1) gFS VDS =5V, ID =7A 9 S Diode forward voltage(note 1) VSD I S=1A, VGS = 0V 1 V DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss VDS =10V,VGS =0V,f =1MHz 7.6 pF Output Capacitance Coss 250 pF Reverse Transfer Capacitance Crss 210 pF Total gate charge Qg VDS =10V,VGS =4.5V,ID =7A 17 nC Gate-source charge Qgs 2.0 nC Gate-drain charge Qgd 5.1 nC SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 2.2 ns Turn-on rise time tr 5.9 ns Turn-off delay time td(off) 40 ns Turn-off fall time tf 90 ns Notes : 1. Pulse Test : Pulse wi dth≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not su bject to production testing. MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified a 7.3 7.8 8.2 9.0 1950 VGS =4.5V, ID =3A 6.3 6.5 7.0 7.5 Drain-Source Diode Characteristics Diode Forward Current - - 6.0 AIS m FCD2004K Dual N-Channel MOSFET
0.01 0.1 VGS =10V、3.0V、2V VGS=1.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed VGS=1.2V DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VDS=16V Pulsed TJ=100℃ TJ=25℃ Transfer Characteristics Output Characteristics THRESHOLD VOLTAGE VTH (mV) JUNCTION TEMPERATURE TJ ( )℃ ID=250uA Threshold Voltage VGS=2.5V ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) TJ=25℃ Pulsed VGS=4.5V VGS=3.8V ID——RDS(ON) TJ=100℃ TJ=25℃ ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) Pulsed ID=8A RDS(ON)—— VGS TJ=100℃ TJ=25℃ SOURCE TO DRAIN VOLTAGE VSD (V) SOURCE CURRENT IS (A) Pulsed VSDIS —— TJ=25℃ Pulsed Typical Characteristics FCD2004K Dual N-Channel MOSFET
0.5 2.5 1.5 150 125 100 75 50 25175 T Ambient Temperature PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz Maximum Safe Operating Area (V)J (℃) Ambient Temperature, TJ -- °C Static Source to Source On State Resistance, RDS(on) -- mΩ --60 --40 --20 0 20 40 60 80 100 120 140 160 IT16977 RDS(ON)—— TA I S =3A, V GS =2.5V IS=3A, V GS =3.1V IS =3A, V GS =3.8V IS =3A, V GS =4.5V Typical Characteristics FCD2004K Dual N-Channel MOSFET
Min. Max. Min. Ma x. A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 D 1.950 2.050 0.077 0.081 E 2.950 3.050 0.116 0.120 D1 1.450 1.550 0.057 0.061 E1 1.650 1.750 0.065 0.069 k b 0.200 0.300 0.008 0.012 e L 0.300 0.400 0.012 0.016 0.500TYP. 0.020TYP. Symbol Dimensions In Millimeters Dimensions In Inches 0.200MIN. 0.008MIN. 0.203REF. 0.008REF. FCD2004K Dual N-Channel MOSFET Plastic surface mounted package; 6 leads DFNWB2x3 PACKAGE OUTLINE L-6