FC21 SANYO | Alldatasheet
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- The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package, thus realizes higher efficiency in device mounting on the PCB. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FC21 Package Dimensions unit : mm 2122 [FC21] TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier, AM tuner RF Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage V DSX 40 V Gate-to-Drain Voltage V GDS - -40 V Gate Current I G 10 mA Drain Current I D 75 mA Allowable Power Dissipation P D 400 mW [TR] Collector-to-Base Voltage V CBO 55 V Collector-to-Emitter Voltage V CEO 50 V Emitter-to-Base Voltage V EBO 6V Collector Current I C 150 mA Collector Current(Pulse) I CP 300 mA Base Current I B 30 mA Collector Dissipation P C 200 mW [Common Ratings] Total Dissipation P T 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking : 1C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
81001 TS IM TA-1526
1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CP5 1.9 0.95 0.95 0.4 2.9 1.6 2.8 0.60.6 0 to 0.1 0.16 0.8 1.1 54 3 1 2
No.7021-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [FET] Gate-to-Drain Breakdown Voltage V (BR)GDS IG =- -10µA, VDS =0 - -40 V Gate Cutoff Current I GSS VGS =- -20V, VDS =0 - -1.0 nA Cutoff Voltage V GS (off) V DS =10V, ID =100µA - -2.0 - -3.0 - -5.0 V Drain Current I DSS VDS =10V, VGS =0 40* 75* mA Forward Transfer Admittance yfs VDS =10V, VGS =0, f=1kHz 22 30 mS Input Capacitance Ciss V DS =10V, VGS =0, f=1MHz 11 pF Reverse Transfer Capacitance Crss V DS =10V, VGS =0, f=1MHz 2.5 pF Noise Figure NF V DS =10V, Rg=1kΩ , ID =1mA, f=1kHz 1.5 dB [TR] Collector Cutoff Current I CBO VCB =35V, IE=0 0.1 µA Emitter Cutoff Current I EBO VEB =4V, IC =0 0.1 µA DC Current Gain h FE VCE =6V, IC =1mA 135 600 Gain-Bandwidth Product f T VCE =6V, IC =10mA 100 MHz Output Capacitance Cob V CB =6V, f=1MHz 3 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =50mA, IB=5mA 0.1 0.5 V Base-to-Emitter Saturation Voltage V BE (sat) I C =50mA, IB=5mA 0.8 1.0 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =10µA, IE=0 55 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =1mA, RBE =∞ 50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10µA, IC =0 6 V * : The FC21 is classified by IDSS as follows : (unit : mA) Electrical Connection Rank JK L IDSS 40 to 52 48 to 63 57 to 75 The specifications shown above are for each individual FET or transistor. 100 ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- mA 100 048 2 0 12 16 ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA 0 12345 ID -- VDS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- mA ITR01960 ITR01961 ITR01963 ITR01964 V GS =0 --0.5V --1.0V --2.0V --2.5V--3.0V V GS =0 --0.5V --1.0V --2.0V --2.5V--3.0V --1.5V--1.5V V DS =10V IDSS =75mA 55mA 40mA V DS =10V IDSS =60mA Ta= --25 75°C [FET] [FET] [FET] [FET] B S CG E / D
No.7021-3/5 52357 10231.0 Drain-to-Source V oltage, VDS -- V Input Capacitance, Ciss -- pF Ciss -- VDS ITR01981 500 400 300 100 200 0 20 40 60 80 100 160 120 140 PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- mW 1.0 1.0 23 5 7 10 23 5 Crss -- VDS Drain-to-Source V oltage, VDS -- V Reverse Transfer Capacitance, Crss -- pF ITR01982 ITR01983 V GS =0 f=1MHz V GS =0 f=1MHz [FET] [FET] [FET] --1.0 1007543 VGS (off) -- IDSS Drain Current, IDSS -- mA ITR01965 35 4 1007 yfs -- IDSS Drain Current, IDSS -- mA Forward Transfer Admittance, yfs -- mS 34 5 7 100 R DS (on) -- IDSS Drain Current, IDSS -- mA ITR01966 ITR01967 V DS =10V f=1kHz V DS =10V IDSS =100µA ID =10mA V GS =0 yfs2(VGS =0) yfs1(ID =10mA) 100 23 5 7 10 23 5 7 100 2 yfs -- ID Drain Current, ID -- mA Forward Transfer Admittance, yfs -- mS ITR01968 IDSS =40mA 55mA 75mA V DS =10V f=1kHz [FET] [FET] [FET] [FET] Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Cutoff V oltage, VGS (off) -- V
No.7021-4/5 1.0 10 100 57321.0 573257 101.0 5732 10057323 2 02 0 5 0 403010 IC -- VCE Collector-to-Emitter V oltage, VCE -- V [TR] [TR] [TR][TR] [TR] [TR] Collector Current, IC -- mA 5µA 10µA 15µA 20µA 25µA 30µA 35µA 40µA 45µA 50µA IT03592 IT03593 IT03595IT03594 IT03596 10 100 57321.0 57323 2 fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz V CE =6V 100 1000 5 2 100 1000 0.1 325 1.0 323 25 100 325 10 hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE V CE =6V Ta=75 --25 200 240 120 160 V CE =6V IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA IB =0 Ta=75°C --25°C25°C f=1MHz Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V IT03597 0.01 1.0 0.1 IC / IB =10 Collector Current, IC -- mA VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 250 200 150 100 2006 0 40 80 100 140 120 160 PC -- Ta ITR10349 [TR]
No.7021-5/5 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2001. Specifications and information herein are subject to change without notice. PS