FBU3V3DS GWSEMI | Alldatasheet

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Technical content

Plastic-Encapsulate Diodes F E A T U R E S z Bi-directional ESD protection of one line z z Reverse stand−off voltage: 3.3V z Low reverse clamping voltage Low leakage current A P P L I C A T I O N S MARKING  Computers and peripherals  Audio and video equipment  Cellular handsets and accessories  Portable electronics  FireWire  Other electronics equipments communi- cation systems  10 Mbit/s Ethernet Bi-direction ESD Protection Diode DFNWB0.6×0.3-2L

DESCRIPTION

C FB U3V3DS Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. z z Fast response time JESD22-A114-B ESD Rating of class 3B per human body model z IEC 61000-4-2 Level 4 ESD protection MAXIMUM RATINGS ( T a =25℃ unless otherwise noted ) Parameter Symbol Limit Unit ±15 IEC 61000-4-2 ESD Voltage Air Model Contact Model ±15 J E S D 2 2 - A 1 1 4 - B E S D V o l t a g e P e r H u m a n B o d y M o d e l ±16 ESD Voltage Machine Model V ESD (1) ±0.4 kV Peak Pulse Power P PP (2) W Peak Pulse Current I PP (2) A Lead Solder Temperature − Maximum (10 Second Duration) T L 260 ℃ Operation Junction and Storage Temperature Range TJ,Tstg -55 ~ +150 (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.

ESD sta nd a r d s c o m p l i a n c e IEC61000-4-2 Standard JESD22-A114-B Standard Contact Discharge Air Discharge Level Test Voltage kV Level Test Voltage kV 1 2 1 2 2 4 2 4 3 6 3 8 4 8 4 15 ESD Class Human Bod y Discharge V 0 0～249 250～499 500～999 1000～1999 2 2000～3999 4000～7999 8000～15999 ESD pulse waveform according to IEC61000-4-2 8/20μs pulse waveform according to IEC 61000-4-5 FB U3V3DS ELECTRICAL CHARACTERISTICS(T a =25℃ u n l e s s o t h e r w i se s p e c i f i e d ) ELECTRICAL PARAMETER Parameter Symbol Test conditions Min T yp Max Unit Reverse stand off voltage V RWM 3.3 V Reverse leakage current I R VRWM=3.3V 0.1 uA Breakdown voltage V (BR) I T =1mA V Clamping voltage VC （2） IPP=4A V Junction capacitance C J V R =0V,f=1MHz pF (1).Other voltages available upon request. (2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 .40 V-I characteristics for a Bi-directional TVS Symbol Parameter VC Clamping Voltage @ I PP IPP Peak Pulse Current VBR Breakdown Voltage @ IBR IBR Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage I V VRWM IPP IR VCL IPP VRWMVCL IR VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current VBR Reverse breakdown voltage IBR Reverse breakdown current IBR VBR IBR VBR 7.0 11 7.5 0.5

C (V) REVERSE PEAK PULSE CURRENT I PP (A) V C ---- I PP 12345 T a =25 f=1MHz 1.5 3.0 4.5 6.0 7.5 Reverse Characteristics -15 -10 -5 0 5 10 15 -80 -40 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) JUNCTION CAPACITANCE C J (pF) 0 1 2 3 4 5 0.1 0.2 0.3 0.4 0.5 0.6

Plastic surface mounted package; 2 leads DFNWB0. PACKAGE OUTLINE 3-2L6 x0. Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.270 0.340 0.010 0.013 D 0.550 0.670 0.021 0.026 E 0.250 0.370 0.009 0.015 b 0.200 0.350 0.008 0.014 c 0.050 REF. 0.002 REF. e 0.350 0.435 0.014 0.017 L1 0.125 0.230 0.005 0.009 L2 0.030 REF. 0.001 REF.