FBP5096G3

FBP5096G3 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• Low Noise and High Gain:
• NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz ∣S21∣² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz

Applications

• Low noise and high gain amplifiers & Oscillator buffer amplifiers
• Cordless Phone : LNA , MIX ,and OSC
• Remote Cotroller FBP5096G3 WBFBP-03A B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 2/9 FBP5096G3 CYStek Product Specification Absolute Maximum Ratings

• Maximum Ratings (Ta=25°C) Parameters Symbol Limits Unit Collector-Emitter Breakdown Voltage VCEO 10 V Collector-Base Breakdown Voltage VCBO 18 V Emitter-Base Breakdown Voltage VEBO 2.5 V Collector Current IC 20 *1 mA Collector Power Dissipation Pd 150 mW Junction Temperature Tj 125 °C Storage Temperature Tstg -50~125 °C Note: *1 Here we define the point DC current gain drops off.

Electrical Characteristics

• Characterization Information (Ta=25°C) Parameters Conditions Symbol Min Typ. Max Unit Collector Cutoff Current VCB =3V, IE=0 ICBO - - 1 µA Emitter Cutoff Current VEB =1V IEBO - - 1 µA VCE =1V, IC =10mA hFE(1) 50 - - - DC Current Gain VCE =2V, IC =7mA hFE(2) 82 - 180 - VCE =1V, IC =10mA - 7.6 - GHzCutoff Frequency VCE =3V, IC =12mA fT - 9 - GHz VCE =2V, IC =4.2mA, f =0.9GHz - 12.8 - dB Insertion Gain |S21|2 In 50 Ohm system VCE =5V, IC =4.5mA, f =0.9GHz |S21|2 - 13.5 - dB Output Capacitance VCB =10V, IE=0, f = 0.9GHz Cob - 0.7 1.0 pF S-Parameters
• VC=2V, IC=4.2mA, IB=60μA FREQ. S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 3/9 FBP5096G3 CYStek Product Specification

• VC=5V, IC=4.5mA, IB=60μA FREQ. S11 S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 4/9 FBP5096G3 CYStek Product Specification

• Smoothed noise data (VC=2V, IC=4.2mA, IB=60μA) FREQ. FMIN GAMMA OPT Rn Ga F50-S F50-M G50 (GHz) (dB) Mag Ang (To 50) (dB) (dB) (dB) (dB)
• Smoothed noise data (VC=5V, IC=4.5mA, IB=60μA) FREQ. FMIN GAMMA OPT Rn Ga F50-S F50-M G50 (GHz) (dB) Mag Ang (To 50) (dB) (dB) (dB) (dB) HSPICE 2G.6 Model
• NPN BJT Parameters IS=1.444E-16 (A) IKR=10.0E-3 MJE=0.3882 TR=1.0E-9 (Sec) BF=85.9 ISC=1.21E-16 TF=1.22E-11 (Sec) CJS=2.43E-13 (F) NF=1.0 NC=1.01 XTF=1.70 VJS=0.5734 (V) VAF=45.9 (V) RB=4.30 (Ohm) VTF=0.69 (V) MJS=0.3798 IKF=160.3E-3 (A) IRB=20.0E-3 (A) ITF=0.1 (A) XTB=0.0 ISE=2.0E-18 (A) RBM=2.78 (Ohm) PTF=10.0 (deg) EG=1.11 (eV) NE=2.0 RE=1.011 (Ohm) CJC=2.38E-13 (F) XTI=3.0 BR=18.54 RC=16.69 (Ohm) VJC=0.7 (V) FC=0.9 NR=1.01 CJE=6.04E-13 (F) MJC=0.4474 TNOM=25 (°C) VAR=6.299 VJE=1.003 (V) XCJC=0.3
• B’-E’ DIODE Parameters

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 5/9 FBP5096G3 CYStek Product Specification IS=1.0E-22 (A) CJO=1.0E-15 (F) XTI=3.0 KF=0.0 RS=10.0 (Ohm) VJ=1.003 (V) FC=0.9 AF=1.0 N=1.0 M=0.3882 BV=0.0 (V) TNOM=25 (°C) TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3 (A)

• C’-S’ DIODE Parameters IS=1.0E-22 (A) CJO=1.0E-15 (F) XTI=3.0 KF=0.0 RS=0.0 (Ohm) VJ=0.5734 (V) FC=0.5 AF=1.0 N=1.0 M=0.3798 BV=0.0 (V) TNOM=27 (°C) TT=0.0 (Sec) EG=1.11 (eV) IBV=1.0E-3(A)
• Other Parasitic Parameters REX=0.0 (Ohm) RSS=10.0 (Ohm) C2=150 (fF) L1=0.5 (nH) RBX=0.0 (Ohm) RSC=250.0 (Ohm) C3=80 (fF) L2=0.5 (nH) RCX=0.0 (Ohm) CSP=20.89 (fF) Le=0.6 (nH) L3=0.6 (nH) RSX=5.0 (Ohm) CSC=41.79 (fF) Lb=0.85 (nH) RSP=450.0 (Ohm) C1=70 (fF) Lc=0 (nH) Transistor Chip Equivalent Circuit Package Equivalent Circuit B RBX E Rsp REX 0.1nH G-P RSS CSP C RSC RSX CSC Transistor Chip Collector Base Emitter C1 C2 LC L2 Le LbL1 B C E S

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 6/9 FBP5096G3 CYStek Product Specification Characteristic Curves Fig.1 Typical Forward Gummel Plot 1.00E-10 1.00E-09 1.00E-08 1.00E-07 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Base-Emitter Bias Voltage (V) Collector and Base Currents (A) VCE=1V Fig.2 Typical Forward Current Gain & Collector Current 100 Collector Current (A) Current Gain VCE=1V Fig.3 Typical Output Characteristics 0.0E+00 1.0E-03 2.0E-03 3.0E-03 4.0E-03 5.0E-03 012345 Collector Voltage (V) Collector Currennt (A) Ib=10uA Ib=20uA Ib=30uA Ib=40uA Ib=50uA Fig.4 Typical fT & Collector Current 0.0E+00 1.0E+09 2.0E+09 3.0E+09 4.0E+09 5.0E+09 6.0E+09 7.0E+09 8.0E+09 9.0E+09 1.0E+10 Collector Current (A) Cutoff Frequency (Hz) Vce = 1V Vce = 3 V Fig.6 Typical Associated Gain & Collector Current 0.1 1 10 100 Collector Current (mA) Associated Gain (dB) VCE=2V Fig.5 Typical NFmin & Collector Current 0.5 1.5 2.5 3.5 4.5 0.1 1 10 100 Collector Current (mA) NFmin (dB) VCE=2V

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 7/9 FBP5096G3 CYStek Product Specification Characteristic Curves(Cont.) Fig.7 Capacitance & Reverse-Biased Voltage 0.1 0.1 1 10 Reverse Biased Voltage (V) Capacitance (pF) Cob

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 8/9 FBP5096G3 CYStek Product Specification Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 9/9 FBP5096G3 CYStek Product Specification WBFBP-03A Dimension *: Typical Inches Millimeters Inches Millimeters DIM Min. Max. Marking: WBFBP-03A Plastic Surface Mounted Package CYStek Package Code: G3 b1 0.013(REF) 0.320(REF) L2 0.007(REF) 0.180(REF) D2 0.030(REF) 0.750(REF) k 0.013(REF) 0.320(REF) E2 0.040(REF) 1.000(REF) z 0.006(REF) 0.160(REF) Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.