FBM3020 GWSEMI | Alldatasheet
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Technical content
D F NWB3×3-8L
DESCRIPTION
DS(ON)
FEATURES
Battery switch Load switch High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Special process technology for high ESD capability
APPLICATIONS
SMPS and general purpose applications Hard switched and high frequency circuits Uninterruptible Power Supply EQUIVALENT CIRCUIT MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 20 A Pulsed Drain Current IDM 80 A Single Pulsed Avalanche Energy EAS 48 mJ Power Dissipation PD 1.5 W Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W V(BR)DSS RDS(on)TYP ID 30V 8.8mΩ@10V 20A 15mΩ@4.5V D1 D1 D1 G1 S2 S2 S2 G2 S1/D2 ℃Operating Junction and Storage Temperature Range -55~+150TJ ,Tstg Plastic-Encapsulate MOSFETS FB N-Channel Power MOSFETM3020 The FBM3020 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications
Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 30 V Zero gate voltage drain current IDSS VDS =24V, VGS =0V 1 µA Gate-body leakage current IGSS V DS =0V, VGS =±20V ±100 nA On characteristics Gate-threshold voltage VGS(th) V DS =VGS, ID =250µA 1.0 1.6 3.0 V VGS =10V, ID =12A 8.8 14 mΩ Static drain-source on-sate resistance R DS(on) VGS =4.5V, ID =10A 15 20 mΩ Forward transconductance gFS VDS =5V, ID =10A 20 S Dynamic characteristics Input capacitance Ciss 999 Output capacitance Coss 145 Reverse transfer capacitance Crss VDS =15V,VGS =0V, f =1MHz 132 pF Switching characteristics Total gate charge Qg 15 Gate-source charge Qgs 2.6 Gate-drain charge Qgd VDS=15V, VGS=10V, ID=14A 5.3 nC Turn-on delay time td(on) 6.2 Turn-on rise time tr 5.3 Turn-off delay time td(off) 43 Turn-off fall time tf VDD=15V,VGS=10V, RL=1.2Ω,RGEN=3Ω 7.1 ns Drain-Source Diode Characteristics Drain-source diode forward voltage VSD V GS =0V, IS=10A 1.2 V Continuous drain-source diode forward current IS 20 A MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=15V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. ④ ⑤ ④ ⑤ FB N-Channel Power MOSFETM3020
0.0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 1E-3 0.01 0.1 3456789 1 0 5 1 01 52 02 5 VDS=2V Pulsed DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics TJ=25℃ ID=250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ ( )℃ Pulsed SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (mV) VSDIS —— TJ=125℃ TJ=25℃ Pulsed ID=10A RDS(ON)—— VGS ON-RESISTANCE RDS(ON) (m) GATE TO SOURCE VOLTAGE VGS (V) TJ=125℃ TJ=25℃ TJ=25℃ Pulsed ON-RESISTANCE RDS(ON) (m) DRAIN CURRENT ID (A) ID——RDS(ON) VGS=10V VGS=4.5V Pulsed 210 543 10V VGS= 6V VGS=3.0V Pulsed Output Ch aracteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VGS= 4.5V TJ=25℃ VGS=3.3V VGS=3.5V Typical Characteristics FB N-Channel Power MOSFETM3020
Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 D 2.950 3.050 0.116 0.120 E 2.950 3.050 0.116 0.120 D1 2.250 2.350 0.089 0.093 E1 1.700 1.900 0.067 0.075 E2 0.450 0.550 0.018 0.022 E3 0.900 1.000 0.035 0.039 k 0.200 0.300 0.008 0.012 G1 0.200 0.300 0.008 0.012 b 0.350 0.450 0.014 0.018 e L 0.300 0.400 0.012 0.016 1.95BSC 0.077BSC 0.650BSC 0.026BSC Symbol Dimensions In Millimeters Dimensions In Inches 0.203REF. 0.008REF. FB N-Channel Power MOSFETM3020 Plastic surface mounted package; 8 leads DFNWB3x3 PACKAGE OUTLINE L-8