FBE5005K GWSEMI | Alldatasheet
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DS(ON) MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current I D A Pulsed Drain Current I DM A Thermal Resistance from Junction to Ambient R θJA 83.3 ℃/W Junction Temperature T j 150 ℃ Storage Temperature T stg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V (BR)DSS R DS(on) TYP I D 20V 10A 9.3 mΩ 4.5V 10.0mΩ@3.8V 10.7mΩ@3.1V 12.5mΩ@2.5V 9.7mΩ@4.0V Equivalent Circuit D F NWB3×3-8L-K Plastic-Encapsulate MOSFETS FB Dual N-Channel MOSFET E5005K The FBE5005K uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by it s common-drain configuration.
Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA Gate threshold voltage (note 1) VGS(th) VDS =VGS, ID =250µA 0.4 1 V Drain-source on-resistance (note 1) R DS(on) VGS =4.5V, ID =5A Ω VGS =4.0V, ID =5A m Ω VGS =3.8V, ID =5A 13 m Ω VGS =3.1V, ID =5A 14 m Ω VGS =2.5V, ID =5A Ω Forward tranconductance (note 1) gFS VDS =5V, ID =7A 9 S Diode forward voltage(note 1) VSD I S=1A, VGS = 0V 1 V DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss VDS =10V,VGS =0V,f =1MHz 9.3 pF Output Capacitance Coss 230 pF Reverse Transfer Capacitance Crss 200 pF Total gate charge Qg VDS =10V,VGS =4.5V,ID =7A 17 nC Gate-source charge Qgs 1.5 nC Gate-drain charge Qgd 4.7 nC SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 2.5 ns Turn-on rise time tr 7.2 ns Turn-off delay time td(off) 49 ns Turn-off fall time tf 108 ns Notes : 1. Pulse Te st : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not su bject to production testing. MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified a 10.0 10.7 1700 12.5 m 17 m12.5 8.2 8.5 9.5 Drain-Source Diode Characteristics Diode Forward Current - - 8.0 AIS 11.5 9.7 FB Dual N-Channel MOSFETE5005K
0.01 0.1 VGS =10V、3.0V、2V VGS=1.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed VGS=1.2V DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VDS=16V Pulsed TJ=100℃ TJ=25℃ Transfer Characteristics Output Characteristics THRESHOLD VOLTAGE VTH (mV) JUNCTION TEMPERATURE TJ ( )℃ ID=250uA Threshold Voltage VGS=2.5V ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) TJ=25℃ Pulsed VGS=3.8V ID——RDS(ON) TJ=100℃ TJ=25℃ ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) Pulsed ID=5A RDS(ON)—— VGS TJ=100℃ TJ=25℃ SOURCE TO DRAIN VOLTAGE VSD (V) SOURCE CURRENT IS (A) Pulsed VSDIS —— VGS=4.5V TJ=25℃ Pulsed Typical Characteristics FB Dual N-Channel MOSFETE5005K
0.5 2.5 1.5 150 125 100 75 50 25175 T Ambient Temperature PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz J (℃) Ambient Temperature, TJ -- °C Static Source to Source On State Resistance, RDS(on) -- mΩ --60 --40 --20 0 20 40 60 80 100 120 140 160 IT16977 RDS(ON)—— TA IS =3A, V GS=2.5V IS =3A, V GS =4.5V IS =3A, V GS =3.1V IS =3A, V GS=3.8V Maximum Safe Operating Area (V)Drain-SourceVoltage VDS Typical Characteristics FB Dual N-Channel MOSFETE5005K
FB Dual N-Channel MOSFETE5005K Plastic surface mounted package; 8 leads DFNWB3x3 PACKAGE OUTLINE L-K-8