FBB3134K GWSEMI | Alldatasheet

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z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate APPLICATION z Load/ Power Switching z I n t e r f a c i n g S w i t c h i n g z Battery Management for Ultra Small Portable Electronics z Logic Level Shift MARKING: ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 V Typical Gate-Source Voltage V GS ±12 V Continuous Drain Current (note 1) I D 0.75 A Pulsed Drain Current (tp=10us) I DM 1.8 A Power Dissipation (note 1) P D 100 mW Thermal Resistance from Junction to Ambient (note 1) R θJA 1250 ℃/W Operation Junction and Storage Temperature Range TJ,TSTG -55~ 150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ Equivalent Circuit Plastic-Encapsulate MOSFETs FB B N-Channel MOSFET 3134K V (BR)DSS R DS(on) MAX I D 20V 500mΩ@4.5V 0.75A 700mΩ@2.5V 900mΩ@1.8V

MOSFET ELECTRICAL CHARACTERISTICS Ta=25℃ unless otherwise noted Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain source breakdow n voltage V (BR)DSS V GS = 0V, I D 250µA V Zero gate voltage drain current I DSS V DS V,V GS = 0V µA Gate body leakage current I GSS V GS V, V DS = 0V ±20 µA Gate threshold voltage (2) V GS(th) V DS GS , I D 250µA 0.75 1.1 V Drain source on resistance (2) R DS(on) V GS =4.5V, I D 50mA 500 mΩ V GS =2.5V, I D 50mA 300 700 V GS =1.8V, I D 50mA 370 Forward tranconductance gFS VDS =10V, ID =150mA 150 mS Dynamic characteristics(4) Input Capacitance Ciss VDS=16V,VGS=0V,f=1MHz 79 120 pF Output Capacitance Coss 13 20 Reverse Transfer Capacitance Crss 9 15 Switching Characteristics(4) Turn-on delay time(3) td(on) VDS=10V,ID=500mA, VGS=4.5V,RG=10Ω 6.7 ns Turn-on rise time(3) tr 4.8 Turn-off delay time(3) td(off) 17.3 Turn-off fall time(3) tf 7.4 Source-Drain Diode characteristics Diode Forward voltage(3) VDS IS=0.15A, VGS = 0V 1.2 V Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300μs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. 250 100 150 200 FB B N-Channel MOSFET 3134K

0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 V GS V T a Plu sed Out put Characteristics V GS V V GS V V GS .5V V GS V V GS .5V Drain Current I D (A) Drain to Source Voltage V DS (V) 0.0 0.6 1.2 1.8 2.4 3.0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 Tr ansfer Characteristics T a T a Drain Current I D (A) Gat e to Source Voltage V GS (V) V DS V Plu sed 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.2 0.4 0.6 0.8 R D S(ON) ——I D Ta=2 Plu sed V GS .5V V GS .5V V GS .8V On- Resistancer R D SON (Ω) Drain Current I D (A) 0.0 0.5 1.0 1.5 2.0 R D S(ON) ——V GS I D =650 mA Pl used T a On- Resistancer R D SON (Ω) Gat e to Source Voltage V GS (V) T a 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.1 Plu sed I S ——V SD T a Sour ce Current I S (A) Sour ce to Drain Voltage V SD (V) T a 100 125 0.5 0.6 0.7 0.8 Th reshold Voltage Th reshold Voltage V TH (V) Juctio n Temperature T J I D 50uA 7\\SLFDO&KDUDFWHULVWLFV FB B N-Channel MOSFET 3134K

Dim Min. Max. Typ. A 0.34 0.40 0.37 A1 0.00 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e - - 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 - - 0.40 DFN1006-3L-A All Dimensions in mm FB B N-Channel MOSFET 3134K Plastic surface mounted package; 3 leads DFN1006 PACKAGE OUTLINE -3L-A