FBA50CA50

SanRex Corporation

MOSFET MODULE

Manufacturer: SanRex Corporation

Document: 21 Pages / 340Kb

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q e i u y t w FCA50CC50 MOSFET MODULE UL;E76102ʢMʣ NAME PLATE 107.5ʶ ɾП 93ʶ 35ʶ 30max 31max 4174 3Ŗ. TAB 110ʢ5ʣ 321 UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ ˙Electrical Charactistics ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings FCA50CC50 Unit VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ʶ20 V ID Drain Current DC Pulse Duty 55% 50 AIDP 100 -ID Source Current 50 A PT Total Power Dissipation Tcʹ25ˆ 330 W Tj Channel Temperature ʵ40 UPʴ150 ˆ Tstg Storage Temperature ʵ40 UPʴ125 ˆ Mounting Torque MountingʢM6ʣ TerminalʢM5ʣ Recommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 1.5-2.5ʢ15-25ʣ 2.7ʢ28ʣ Mass Typical Value 240 g Symbol Item Conditions Ratings Min. Typ. Max. ʶ1.0 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 1.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ500V mA 500VʢBRʣDSS Darin-Source Breakdown Voltage VGSʹ0VɼIDʹ1mA V 1.0 5.0VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 140RDSʢonʣ Drain-Source On-State Resistance IDʹ25AɼVGSʹ15V mЊ 3.5VDSʢonʣ Drain-Source On-State Voltage IDʹ25AɼVGSʹ15V V 30gfs Forward Transconductance VDSʹ10VɼIDʹ25A S 10000Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 1900Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 750Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time VDDʹ300VɼVGSʹ15V IDʹ25AɼRGʹ5Њ ns100 tdʢonʣ 520 tf 140 tdʢoffʣ 2.0VSDS Diode Forward Voltage ISʹ25AɼVGSʹ0V V 80 100trr Reverse Recovery Time ISʹ25AɼVGSʹʵ5Vɼdi/dtʹ100A/Жs ns 0.38 1.67Rthʢj-cʣ Thermal Resistance MOSFET Diode ˆ/W FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.ʢ2 devices are serial connected with a fast recovery diode ʢUSSʽ100nsʣreverse connected across each MOSFET.ʣ The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ50A, VDSSʹ500V ˔Suitable for high speed switching applications. ˔Low ON resistance. ˔Wide Safe Operating Areas. ˔trrʽ100ns fast recovery diode for free wheel. ʢApplicationsʣ UPSʢCVCFʣ, Motor Control, Switching Power Supply, etc.

0VUQVU$IBSBDUFSJTUJDTʢ5ZQJDBMʣ ̍̌̌ 5Kʹˆ 1VMTF5FTU 7(Tʹ̐7 ̍̑7 ̍̌7 %SBJO$VSSFOU*%ʢ"ʣ %SBJO4PVSDF7PMUBHF7%̨ʢ7ʣ 7%4 5K ˆ 1VMTF5FTU 'PSXBSE5SBOTGFS$IBSBDUFSJTUJDTʢ5ZQJDBMʣ %SBJO$VSSFOU*%ʢ"ʣ (BUF4PVSDF7PMUBHF7̨̜ʢ7ʣ 5K ˆ 5ZQJDBM 1VMTF5FTU 7%4 7 'PSXBSE5SBOTDPOEVDUBODF7T %SBJO$VSSFOU 'PSXBSE5SBOTDPOEVDUBODF̶̵͂ʢ4ʣ %SBJO$VSSFOU̞̙ʢ"ʣ 5K ˆ 5K ˆ 5K ˆ 1VMTF5FTU 5ZQJDBM %SBJO4PVSDF0O4UBUF3FTJTUBODF7T %SBJO$VSSFOU ̌ɽ̏ ̌ɽ̎ ̌ɽ̍ ̌ ̍̌ %SBJO4PVSDF0O4UBUF3FTJTUBODF̧̨̙ʢ̾̽ʣʢЊʣ %SBJO$VSSFOU̞̙ʢ"ʣ 5K ˆ 7(T 7 G .)[ $JTT $PTT $STT *OQVU$BQBDJUBODF 0VUQVU$BQBDJUBODF 3FWFSTF5SBOTGFS$BQBDJUBODFʢ5ZQJDBMʣ ̍̌̌̌ $BQBDJUBODF̘ʢ̛̥ʣ %SBJO4PVSDF7PMUBHF7̨̙ʢ7ʣ 5D ˆ ЖT1X ЖT NT 1X NT /PO3FQFUJUJWF 4BGF0QFSBUJOH"SFB %SBJO4PVSDF7PMUBHF7̨̙ʢ7ʣ %SBJO$VSSFOU*%ʢ"ʣ

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q e i u y t w FCA75CC50 MOSFET MODULE UL;E76102ʢMʣ NAME PLATE 107.5ʶ ɾП 93ʶ 35ʶ 30max 31max 4174 3Ŗ. TAB 110ʢ5ʣ 321 UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ ˙Electrical Characteristics ʢTjʹ25ˆʣ Symbol Item Conditions Ratings FCA75CC50 Unit VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ʶ20 V ID Drain Current DC Pulse Duty 35% 75 AIDP 150 -ID Source Current 75 A PT Total Power Dissipation Tcʹ25ˆ 430 W Tj Channel Temperature ʵ40 UPʴ150 ˆ Tstg Storage Temperature ʵ40 UPʴ125 ˆ Mounting Torque MountingʢM6ʣ TerminalʢM5ʣ Recommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 1.5-2.5ʢ15-25ʣ 2.7ʢ28ʣ Mass Typical Value 240 g Symbol Item Conditions Ratings Min. Typ. Max. ʶ1.0 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 1.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ500V mA 500VʢBRʣDSS Darin-Source Breakdown Voltage VGSʹ0VɼIDʹ1mA V 1.0 5.0VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 110RDSʢonʣ Drain-Source On-State Resistance IDʹ40AɼVGSʹ15V mЊ 4.4VDSʢonʣ Drain-Source On-State Voltage IDʹ40AɼVGSʹ15V V 40gfs Forward Transconductance VDSʹ10VɼIDʹ40A S 13500Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 2500Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 1000Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time VDDʹ300VɼVGSʹ15V IDʹ40AɼRGʹ5Њ ns140 tdʢonʣ 700 tf 210 tdʢoffʣ 2.5VSDS Diode Forward Voltage ʵISʹ40AɼVGSʹ0V V 80 100trr Reverse Recovery Time ʵISʹ40AɼVGSʹʵ5Vɼdi/dtʹ100A/Жs ns 0.29 1.67Rthʢj-cʣ Thermal Resistance MOSFET Diode ˆ/W FCA75CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. ʢ2 devices are serial connected with a fast recovery diode ʢUSSʽ100nsʣreverse connected across each MOSFET.ʣ The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ75A, VDSSʹ500V ˔Suitable for high speed switching applications. ˔Low ON resistance. ˔Wide Safe Operating Areas. ˔trrʽ100ns fast recovery diode for free wheel. ʢApplicationsʣ UPSʢCVCFʣ, Motor Control, Switching Power Supply, etc.

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UL;E76102ʢMʣ FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. ʢ2 devices are serial connected.ʣ The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ50A, VDSSʹ500V ˔Suitable for high speed switching applications. ˔Low ON resistance. ˔Wide Safe Operating Areas. ʢApplicationsʣ UPSʢCVCFʣ, Motor Control, Switching Power Supply, etc. 107.5ʶ0.6 14 32 19 19 NAME PLATE 2П6.5 93ʶ0.3 35ʶ0.6 31max 30max 4M5 4174 765 TAB 110ʢ5ʣ UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ ˙Electrical Characteristics ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings FBA50CA45 FBA50CA50 Unit VDSS Drain-Source Voltage 450 500 V VGSS Gate-Source Voltage ʶ20 V ID Drain Current D.C. Pulse

50 AIDP 100

-ID Source Current 50 A PT Total Power Dissipation Tcʹ25ˆ 320 W Tj Channel Temperature 150 ˆ Tstg Storage Temperature ʵ40 UPʴ125 ˆ Mounting Torque MountingʢM6ʣ TerminalʢM5ʣ Recommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 1.5-2.5ʢ15-25ʣ 2.7ʢ28ʣ Mass Typical Value 220 g Symbol Item Conditions Ratings Min. Typ. Max. ʶ1.0 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 1.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ500V mA 450VʢBRʣDSS Drain-Source Breakdown Voltage FBA50CA45 FBA50CA50 VGSʹ0VɼIDʹ1mA V500 1.0 5.0VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 120RDSʢonʣ Drain-Source On-State Resistance IDʹ25AɼVGSʹ15V mЊ 3.0VDSʢonʣ Drain-Source On-State Voltage IDʹ25AɼVGSʹ15V V 30gfs Forward Transconductance VDSʹ10VɼIDʹ25A S 10000Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 1900Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 750Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time RLʹ12ЊɼRGSʹ50ЊɼVGSʹ15V IDʹ25AɼRGʹ5Њ ns60 tdʢonʣ 650 tf 130 tdʢoffʣ 1.5VSDS Diode Forward Voltage ʔIDʹ25AɼVGSʹ0V V 700trr Reverse Recovery Time ʔIDʹ25AɼVGSʹ0Vɼdi/dtʹ100A/Жs ns 0.39Rthʢj-cʣ Thermal Resistance ˆ/W q %4 % 4 4 i u y t w er

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UL;E76102ʢMʣ FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.ʢ2 devices are serial connected.ʣ The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ75A, VDSSʹ500V ˔Suitable for high speed switching applications. ˔Low ON resistance. ˔Wide Safe Operating Areas. ʢApplicationsʣ UPSʢCVCFʣ, Motor Control, Switching Power Supply, etc. 107.5ʶ0.6 14 32 19 19 NAME PLATE 2П6.5 93ʶ0.3 35ʶ0.6 31max 30max 4M5 4174 765 TAB 110ʢ5ʣ UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings FBA75CA45 FBA75CA50 Unit VDSS Drain-Source Voltage 450 500 V VGSS Gate-Source Voltage ʶ20 V ID Drain Current D.C. Pulse Dutyʹ36% 75 AIDP 150 -ID Source Current 75 A PT Total Power Dissipation Tcʹ25ˆ 400 W Tj Channel Temperature 150 ˆ Tstg Storage Temperature ʵ40 UPʴ125 ˆ Mounting Torque MountingʢM6ʣ TerminalʢM5ʣ Recommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 1.5-2.5ʢ15-25ʣ 2.7ʢ28ʣ Mass Typical Value 220 g q %4 % 4 4 i u y t w er ˙Electrical Characteristics ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings Min. Typ. Max. ʶ1.0 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 1.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ500V mA 450VʢBRʣDSS Drain-Source Breakdown Voltage FBA75CA45 FBA75CA50 VGSʹ0VɼIDʹ1mA V500 1.0 5.0VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 0.10RDSʢonʣ Drain-Source On-State Resistance IDʹ40AɼVGSʹ15V Њ 4.0VDSʢonʣ Drain-Source On-State Voltage IDʹ40AɼVGSʹ15V V 40gfs Forward Transconductance VDSʹ10VɼVDʹ40A S 13500Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 2500Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 1000Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time RLʹ7.5ЊɼRGSʹ50ЊɼVGSʹ15V IDʹ40AɼRGʹ5Њ ns120 tdʢonʣ 700 tf 210 tdʢoffʣ 1.5VSDS Diode Forward Voltage ʔIDʹ40AɼVGSʹ0V V 700trr Reverse Recovery Time ʔIDʹ40AɼVGSʹ0Vɼdi/dtʹ100A/Жs ns 0.31Rthʢj-cʣ Thermal Resistance ˆ/W

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UL;E76102ʢMʣ SF100BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ100A, VDSSʹ500V ˔Suitable for high speed switching applications. ˔Low ON resistance. ˔Wide Safe Operating Areas. ˔trrʽ700ns ʢApplicationsʣ UPSʢCVCFʣ, Motor Control, Switching Power Supply, etc. 80.5NBY 2-M5 ɹɹɹɹʢEFQUINNʣ ʷ5"#ˌ П 52.5NBY 34.0ʶ 65.0ʶ ʶ ʶ NBY NBY NAME PLATE UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ ˙Electrical Characteristics ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings SF100BA50 Unit VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ʶ20 V ID Drain Current DC Pulse Dutyʹ43% 100 AIDP 200 -ID Source Current 100 A PT Total Power Dissipation Tcʹ25ˆ 600 W Tj Channel Temperature ʵ40ʙʴ150 ˆ Tstg Storage Temperature ʵ40ʙʴ125 ˆ Mounting Torque Mounting ʢM6ʣ TerminalʢM5ʣ Recommended Value 2.5ʙ3.9 ʢ25ʙ40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 1.5ʙ2.5 ʢ15ʙ25ʣ 2.7ʢ28ʣ Mass Typical Value 160 g Symbol Item Conditions Ratings Min. Typ. Max. ʶ2.0 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 1.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ500V mA 500VʢBRʣDSS Darin-Source Breakdown Voltage VGSʹ0VɼIDʹ1mA V 1.0 5.0VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 70RDSʢonʣ Drain-Source On-State Resistance IDʹ50AɼVGSʹ15V mЊ 3.5VDSʢonʣ Drain-Source On-State Voltage IDʹ50AɼVGSʹ15V V 60gfs Forward Transconductance VDSʹ10AɼIDʹ50A S 20000Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 3800Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 1500Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time RLʹ6ЊɼRGSʹ50ЊɼVGSʹ15V IDʹ50AɼRGʹ5Њ Жs120 tdʢonʣ 1100 tf 280 tdʢoffʣ 1.5VSDS Diode Forward Voltage ʵIDʹ50AɼVGSʹ0V V 700trr Reverse Recovery Time ʵIDʹ50AɼVGSʹ0Vɼdi/dtʹ100A/Жs ns 0.21Rthʢj-cʣ Thermal Resistance ˆ/W q w

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UL;E76102ʢMʣ q w SF150BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ150A, VDSSʹ500V ˔Suitable for high speed switching application. ˔Low ON resistance. ˔Wide Safe Operating Areas. ʢApplicationsʣ UPSʢCVCFʣ, Motor Control, Switching Power Supply, etc. 80.5NBY 2-M5 ɹɹɹɹʢEFQUINNʣ ʷ5"#ˌ П 52.5NBY 34.0ʶ 65.0ʶ ʶ ʶ NBY NBY NAME PLATE UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ ˙Electrical Characteristics ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings SF150BA50 Unit VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ʶ20 V ID Drain Current DC Pulse Dutyʹ35% 150 AIDP 300 -ID Source Current 150 A PT Total Power Dissipation Tcʹ25ˆ 780 W Tj Channel Temperature ʵ40 UPʴ150 ˆ Tstg Storage Temperature ʵ40 UPʴ125 ˆ Mounting Torque MountingʢM6ʣ TerminalʢM5ʣ Recommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 1.5-2.5ʢ15-25ʣ 2.7ʢ28ʣ Mass Typical Value 160 g Symbol Item Conditions Ratings Min. Typ. Max. ʶ2.0 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 2.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ500V mA 500VʢBRʣDSS Darin-Source Breakdown Voltage VGSʹ0VɼIDʹ1mA V 1.0 5.0VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 50RDSʢonʣ Drain-Source On-State Resistance IDʹ75AɼVGSʹ15V mЊ 3.75VDSʢonʣ Drain-Source On-State Voltage IDʹ75AɼVGSʹ15V V 80gfs Forward Transconductance VDSʹ10VɼIDʹ75A S 27000Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 5000Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 2000Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time RLʹ4ЊɼRGSʹ50ЊɼVGSʹ15V IDʹ75AɼRGʹ5Њ ns180 tdʢonʣ 1400 tf 360 tdʢoffʣ 1.5VSDS Diode Forward Voltage ʵIDʹ75AɼVGSʹ0V V 700trr Reverse Recovery Time ʵIDʹ75AɼVGSʹ0Vɼdi/dtʹ100A/Жs ns 0.16Rthʢj-cʣ Thermal Resistance ˆ/W

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UL;E76102ʢMʣ SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diodeʢtrrʽOTʣreverse connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ˔IDʹ100A, VDSSʹ1000V ˔Suitable for high speed switching applications. ˔Low ON resistance. ˔Wide Safe Operating Areas. ˔trrʽ300ns fast recovery diode for free wheel ʢApplicationsʣ NBY NBY ʶ ŖП ʶ NBYNBY NBY 4 ( UnitɿA ˙Maximum Ratings ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ ˙Electrical Characteristics ʢTjʹ25ˆ VOMFTTPUIFSXJTFTQFDJGJFEʣ Symbol Item Conditions Ratings SF100CB100 Unit VDSS Drain-Source Voltage 1000 V VGSS Gate-Source Voltage ʶ30 V ID Drain Current DC Pulse

100 AIDP 200

-ID Source Current 100 A PT Total Power Dissipation Tcʹ25ˆ 800 W Tj Channel Temperature ʵ40 UPʴ150 ˆ Tstg Storage Temperature ʵ40 UPʴ125 ˆ Mounting Torque MountingʢM6ʣ TerminalʢM6ʣ Recommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ Nŋm ʢkgfŋBʣRecommended Value 2.5-3.9ʢ25-40ʣ 4.7ʢ48ʣ TerminalʢM4ʣ Recommended Value 1.0-1.4ʢ10-14ʣ 1.5ʢ15ʣ Mass Typical Value 460 g Symbol Item Conditions Ratings Min. Typ. Max. ʶ0.1 Unit IGSS Gate Leakage Current VGSʹʶ20VɼVDSʹ0V ЖA 4.0IDSS Zero Gate Voltage Drain Current VGSʹ0VɼVDSʹ800V mA 1000VʢBRʣDSS Darin-Source Breakdown Voltage VGSʹ0VɼIDʹ1mA V 1.5 3.5VGSʢthʣ Gate-Source Threshold Voltage VDSʹVGSɼIDʹ10mA V 150RDSʢonʣ Drain-Source On-State Resistance IDʹ100AɼVGSʹ15V mЊ 15VDSʢonʣ Drain-Source On-State Voltage IDʹ100AɼVGSʹ15V V 30 50gfs Forward Transconductance VDSʹ10AɼVDʹ75A S 16000 19200Ciss Input Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 2900 4200Coss Output Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 1800 2600Crss Reverse Transfer Capacitance VGSʹ0VɼVDSʹ25Vɼfʹ1.0MHz pF 150 tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time RLʹ6ЊɼVGSʹ15V/ʵ5V IDʹ100AɼRGʹ2.2Њ ns300 tdʢonʣ 600 tf 300 tdʢoffʣ 1.8VSDS Diode Forward Voltage ʵIDʹ100AɼVGSʹ0V V 300trr Reverse Recovery Time ʵIDʹ100AɼVGSʹ15Vɼdi/dtʹ400A/Жs ns 0.16 0.64Rthʢj-cʣ Thermal Resistance MOSFET Diode ˆ/W 4 %

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Product Information

FBA50CA50 specifications and overview.

Summary

MOSFET MODULE

Description

MOSFET MODULE

Source title FBA50CA50 Datasheet(PDF) - SanRex Corporation

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