FAE9R0SN06AL GWSEMI | Alldatasheet

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Technical content

DS(ON)

FEATURES

 High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage andcurrent

APPLICATIONS

 Battery and loading switching EQUIVALENT CIRCUIT D F NWB3×3-8L V (BR DSS R DS(o TYP I D 60 V 7.0mΩ@10V 50A 666 ' ' '' 10mΩ@4.5V 8.2mΩ@6V MAXIMUM RATINGS ( TJ=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current 200 A Single Pulsed Avalanche Energy EAS mJ Power Dissipation W Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W IDM PD Thermal Resistance from Junction to Case RθJC ℃/W Operating Junction and Storage Temperature Range -55~+150TJ ,TSTG 2.5 125 Plastic-Encapsulate MOSFETS FAE9R0SN06AL N-Channel Power MOSFET The FAE9R0SN06AL uses SGT technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications.

DESCRIPTION

9R0SN06AL= Part No. Solid dot=Pin1 indicator. X XX=Code.  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  Special process technology for high ESD capability

MOSFET ELECTRICAL CHARACTERISTICS Notes: 1.TC=25°℃. 2.Limited only by maximum temperature allowed. 3.VDD=30V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ= 25°℃. 4.Pulse Test : Pulse Width≤380µs, duty cycle ≤2%. 5.Device mounted on 1 in2 FR-4 board with 2oz. single-sided Copper, in a still air environment with TA=25 ℃. Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 60 V Zero gate voltage drain current IDSS VDS =48V, VGS =0V 1.0 Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA On characteristics Gate-threshold voltage VGS(th) V DS =VGS, ID =250µA 1.3 2.0 2.5 V VGS =10V, ID =20A 7.0 mΩ Static drain-source on-sate resistance RDS(on) Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =30V,VGS =0V, f =1MHz pF Switching characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=10V, VDD=30V, ID=20A nC Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf VDD=30V, VGS=10V, RL=5Ω , Rg=10Ω ns Drain-Source Diode Characteristics Drain-source diode forward voltage VSD VGS =0V, IS=20A 1.2 V Continuous drain-source diode forward current IS 50 A Pulsed drain-source diode forward current I SM 200 A 9.0 µA TJ =25℃ TJ =125℃ 100 VGS =6V, ID =15A 8.2 mΩ11 1650 637 5.8 7.8 Gate resistance Rg f =1MHz Ω 12.6 13.6 51.2 30.6 - - Total gate charge Qg 29.8- - VGS=4.5V, VDD=30V, ID=20A TJ=25℃ unless otherwise specified 2.5 14.4 - ns - 40 - nC- 43 Reverse recovery time trr Reverse recovery charge Qrr diS/dt = 100A/μs, IS = 20A, VDD = 30V VGS =4.5V, ID =12A 10 mΩ15- FAE9R0SN06AL N-Channel Power MOSFET

0.0 0.5 1.0 1.5 2.0 2.5 3.0 -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 30 96 12 51 0 20 2 5 01234 T J = 150 T J = 25 V DS = 10V DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics Gate-Source Th reshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J )JUNCTION TEMPERATURE T J T J = 25 T J = 150 ON RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) I D = 20A V GS = 6V NORMALIZED ON RESISTANCE R DS(ON) (100%) V GS = 10V ID = 20A V GS = 4.5V ON RESISTANCE R DS(ON) DRAIN CURRENT I D (A) V GS = 10V On Resistance vs. Junction Temperature On Resistance vs . Gate-Source BiasOn Resistance vs. Drain Current V GS = 3.5V V GS Output Cha racteristics DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) FAE9R0SN06AL N-Channel Power MOSFET Typical Characteristics (TJ = 25℃, unless otherwise specified)

0.1 10 100 1000 10000 0.1 1 10 100 0.1 100 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.1 V DS = 30V I D = 20A GATE TO SOURCE VOLTAGE V GS (V) Gate Charge GATE CHARGE (nC) f = 1MHz Crss Coss Ciss CAPACITANCE C (pF) DRAIN TO SOURCE VOLTAGE V DS (V) Typical Capa citances T J = 150 T J = 25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) Source-Drain Diode For ward Characteristics 500 200 R thJC = 2.5 T C = 25 Single pulse BV DSS 10ms 1ms 100μs 10μs 1μs R DS(on) Limited DC I DM DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) Maximum Safe Operating Area In descending order D (duty cycle) = TON / T R thJC = 2.5 T J,PK = T C + P DM × Z thJC × R thJC NORMALIZED THERMAIL IMPEDANCE JUNCTION-CASE Z thJC RECTANGULAR PULSE DURATION tp (s) Transient Thermal Imped ance, Junction-Case FAE9R0SN06AL N-Channel Power MOSFET Typical Characteristics (TJ = 25℃, unless otherwise specified)

10% 90% td(on) ton td(off) tf toff ID VGS V(BR)DSS IAS VDC Qgd Pulse Gneerator tr DUT VDD VGS VDS Rg ID A EAS = 1/2 × L × IAS2 VDD Pulse Gneerator Pulse Gneerator VDD DUT Pulse Gneerator L Rg VDS+ VDS- Rg1 Rg2 IS A VDD IS VDS trr Qrr IFSM 10% IFSM dIS/dt VGS L Gate Charge Resistive Load Switching Time Un-clamped Inductive Load Switching Drain-Source Body Diode Reverse Recovery VDS FAE9R0SN06AL N-Channel Power MOSFET TEST CIRCUIT AND WAVEFOMRS

Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 D 2.924 3.076 0.115 0.121 E D1 2.350 2.550 0.093 0.100 E1 1.700 1.900 0.067 0.075 k b 0.270 0.370 0.011 0.015 e L 0.300 0.500 0.012 0.020 Symbol Dimensions In Millimeters Dimensions In Inches 0.203 REF. 0.000 0.050 0.000 0.002 0.008 REF. 2.924 3.076 0.115 0.121 0.200 MIN. 0.008 MIN. 0.650 TYP. 0.026 TYP. FAE9R0SN06AL N-Channel Power MOSFET Plastic surface mounted package; 8 leads DFNWB3x3 L-8 PACKAGE OUTLINE D E L A e b k