FAE35SN06 GWSEMI | Alldatasheet

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Technical content

DESCRIPTION

DS(ON) FEA TURES  H igh density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage andcurrent  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  Special process technology for high ESD capability

APPLICATIONS

 Battery and loading switching MARKING EQUIVALENT CIRCUIT M AXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) D F NWB3×3-8L 35SN06= Part No. Solid dot=Pin1 indicator. XX=Code. V (BR ) DSS R DS(o n) TYP I D 60 V 7.5mΩ@10V 35A 10.5mΩ@4.5V P arameter Symbol Limit Unit D rain-Source Voltage VDS 60 V G ate-Source Voltage VGS ±20 V C ontinuous Drain Current ID 35 A P ulsed Drain Current IDM 140 A S ingle Pulsed Avalanche Energy EAS 39 m J P ower Dissipation PD W T hermal Resistance from Junction to Ambient RθJA ℃/W Thermal Resistance from Junction to Case RθJC ℃/W Operating Junction and Storage Temperature Range -55~+150TJ ,Tstg PIN 1 35SN06 XX 666 ' ' '' 83.3 3.5 Plastic-Encapsulate MOSFETS FAE35SN06 N-Channel Power MOSFET The FAE35SN06 uses SGT technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications.

MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Notes: 1.Tc=25℃ Limited only by maximum temperature allowed. 2.Pw≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=30V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ= 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃. FAE35SN06 N-Channel Power MOSFET Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 60 V Zero gate voltage drain current IDSS VDS =48V, VGS =0V 1.0 Gate-body leakage current IGSS V DS =0V, VGS =±20V ±100 nA On characteristics Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.0 1.6 2.5 V VGS =10V, ID =12A 7.5 mΩ Static drain-source on-sate resistance R DS(on) VGS =4.5V, ID =12A 10.5 mΩ Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =30V,VGS =0V, f =1MHz pF Switching characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=10V, VDS=30V, ID=12A nC Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf ns Drain-Source Diode Characteristics Drain-source diode forward voltage VSD VGS =0V, IS=12A 1.2 V Continuous drain-source diode forward current IS A Pulsed drain-source diode forward current I SM 140 A 10.0 14.0 Forward transconductance S gFS VDS =5V, ID =12A 100 µA TJ =25℃ TJ =125℃ ④ ⑤ ④ ⑤ VDD=30V,ID=10A, VGS=10V,RG=4.5Ω, RL=3Ω 1270 574 25.5 2.7 7.5 6.6

0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 02468 1 0 1 2 51 0 1 5 2 0 012345 T J =25 V DS =7V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics Pulsed Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) T J =25 Pulsed T J =125 V SD 0.2 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) I S T J =25 T J =125 Pulsed R DS(ON) —— V GS ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) ID=12A V GS = 4.5V T J =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D ——R DS(ON) V GS = 10V V GS =3V V GS =10V,8V,6V,4V V GS =2.5V Output Characteristics DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) Pulsed T J =25 Typical Characteristics FAE35SN06 N-Channel Power MOSFET

0.1 1 10 100 1000 10000 V DS =30V I D =12A Pulsed GATE TO SOURCE VOLTAGE V GS (V) Gate Charge GATE CHARGE (nC) f=1MHz Pulsed Crss Coss Ciss CAPACITANCE C (pF) DRAIN TO SOURCEVOLTAGE V DS (V) Capacitances 1E-6 1E-5 1E-4 0.01 0.1 1 0.01 0.1 MAXIMUM FORWARD BIASED SAFE OPERATING AREA In descending order NORMALIZED THERMAL IMPEDENCE, Zthjc (K/W) 1E-3 SQUARE WAVE PULSE DURATION, tp (sec) NORMALIZED TRAISIENT THERMAL IMPENDANCE 0.01 0.1 1 10 100 0.01 0.1 100 200 500 10ms 1ms D=T ON T J,PK C DM θJC 1us 10us 100us DC BVdss IDM RDSon Limited R θJC =3.5 T C =25 Single pulse DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) Typical Characteristics FAE35SN06 N-Channel Power MOSFET

D E L A Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 D 2.924 3.076 0.115 0.121 E D1 2.350 2.550 0.093 0.100 E1 1.700 1.900 0.067 0.075 k b 0.270 0.370 0.011 0.015 e L 0.300 0.500 0.012 0.020 Symbol Dimensions In Millimeters Dimensions In Inches 0.203 REF. 0.000 0.050 0.000 0.002 0.008 REF. 2.924 3.076 0.115 0.121 0.200 MIN. 0.008 MIN. 0.650 TYP. 0.026 TYP. e b k FAE35SN06 N-Channel Power MOSFET Plastic surface mounted package; 8 leads DFNWB3x3 L-8 PACKAGE OUTLINE