FAE2002K GWSEMI | Alldatasheet

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DS(ON) MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ±12 Continuous Drain Current I D Pulsed Drain Current I DM 100 Thermal Resistance from Junction to Ambient R θJA 42 ℃/W Junction Temperature T j 150 ℃ Storage Temperature T stg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ Equivalent Circuit V Top Back S1 S1 S1 G1 S2 S2 S2 G2 D1/D2 T C = 25 °C T C = 100 °C A A (1) (1),(2) T A T A = 25 °C = 70 °C Total Power Dissipation PD 3 W (3) XX 2002 = Part No. Solid dot = Pin1 indicator. XX = Code. Plastic-Encapsulate MOSFETS D F NWB3×3-8L-J FAE2002K Dual N-Channel MOSFET The FAE2002K uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. V (BR)DSS R DS(on) TYP I D 18V 15A mΩ@4.5V mΩ@ V mΩ@2.5V mΩ 3.8V 3.1 mΩ 4.0V 4.5 4.4 4.6 4.9 5.4

Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA 18 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 0.4 1 V Drain-source on-resistance R DS(on) 5.5 Ω VGS =4.0V, ID =3A VGS =3.8V, ID =3A VGS =3.1V, ID =3A VGS =2.5V, ID =3A Forward tranconductance gFS VDS =5V, ID =3A 8 S Diode forward voltage VSD I S=1A, VGS = 0V 1 V DYNAMIC PARAMETERS Input Capacitance Ciss VDS =10V,VGS =0V,f =1MHz 4.5 pF Output Capacitance Coss 315 pF Reverse Transfer Capacitance Crss 285 pF Total gate charge Qg VDS =10V,VGS =4.5V,ID =3A 26.5 nC Gate-source charge Qgs 2.4 nC Gate-drain charge Qgd 7.6 nC SWITCHING PARAMETERS Turn-on delay time td(on) VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω 4.5 ns Turn-on rise time tr 8.9 ns Turn-off delay time td(off) 85 ns Turn-off fall time tf 24 ns Notes : 4. Pulse Test : Pulse width ≤300µs, duty cycle≤0.5%. 5. Guaranteed by design, not su bject to production testing. MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified a 4.4 4.6 4.9 5.4 1970 VGS =4.5V, ID =3A Drain-Source Diode Characteristics Diode Forward Current - - 15 AIS m Ω m Ω m Ω m Ω m 5.8 6.0 6.3 6.5 =3A DI 6. The data is theoretically the same as I D , in real applications , should be limited by total power dissipation. 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. (4) (4) (4) (4) (5) (5) (6) Pulse Test:Pulse Width < 10us, Duty Cycle < 0.5%.2. 3. The power dissipation is limited by 150 ℃ junction temperature 4.0 4.1 4.2 4.4 4.8 FAE2002K Dual N-Channel MOSFET

0.1 100 TJ=100℃ TJ=25℃ SOURCE TO DRAIN VOLTAGE VSD (V) SOURCE CURRENT IS (A) Pulsed VSDIS —— 012345 ID=3A TJ=100℃ TJ=25℃ ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) Pulsed RDS(ON)—— VGS 25 50 75 100 125 350 400 450 500 550 600 650 700 750 THRESHOLD VOLTAGE VTH (mV) JUNCTION TEMPERATURE TJ ( )℃ ID=250uA Threshold Voltage VGS=1.3V VGS =1.8V、2.5V、3.8V、4.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed VGS=1.2V DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VDS=3V Pulsed TJ=100℃ TJ=25℃ Transfer Characteristics Output Characteristics 12345678 VGS=2.5V ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) TJ=25℃ Pulsed VGS=4.5V VGS=3.8V ID——RDS(ON) TJ=25℃ Pulsed Typical Characteristics FAE2002K Dual N-Channel MOSFET

PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz J (℃) I D , Drain Current(A) VDSDrain-SourceVoltage 0.1 1 10 20 0.1 0.03 100 RDS(O N) L imit 10us DC 10ms 100ms Maximum Safe Operating Area (V) 1ms VGS=4.5V TJ=25℃ Single Pulse Ambient Temperature, TJ -- °C Static Source to Source On State Resistance, RDS(on) -- mΩ --60 --40 --20 0 20 40 60 80 100 120 140 160 IT16977 CJA E 2002RDS(ON)—— TA I S =3A, V GS =2.5V IS=3A, V GS=3.1V IS=3A, V GS=3.8V IS=3A, V GS=4.5V Typical Characteristics FAE2002K Dual N-Channel MOSFET

Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 D 2.924 3.076 0.115 0.121 E 2.924 3.076 0.115 0.121 D1 2.200 2.400 0.087 0.094 E1 1.400 1.600 0.055 0.063 b 0.250 0.350 0.010 0.014 k e L 0.324 0.476 0.013 0.019 0.650TYP. 0.026TYP. Symbol Dimensions In Millimeters Dimensions In Inches 0.203REF. 0.008REF. 0.200MIN 0.008MIN FAE2002K Dual N-Channel MOSFET Plastic surface mounted package; 2 leads DFNWB3x3-8 PACKAGE OUTLINE L-J D E TOP VIEW b N5 N8 k L N1 N4 e BOTTOM VIEW SIDE VIEW A