FABS202 HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

o

  • VRRM 50V-1000V
  • High surge current capability

Applications

Polarity: Color band denotes cathode Glass passivated chip ● FABS2X H igh Diode Semiconductor ABS ABS Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications FABS Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V 200 400 600 800 1000 Average Rectified Output Current I O A 60Hz sine wave, R-load,Ta=35℃ On alumina substrate 2.0 Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃,Rating of per diode 3.7 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150 V 140 280 420 560 700 V RMS 202 204 206 208 210 Maximum RMS Voltage FABS202 THRU FABS210 Item Symbol Unit Test Condition Peak Forward Voltage V F V I F =2.0A 1.3 Maximum reverse recovery time t rr ns I F =0.5A,I R =1.0A,I rr I RRM1 Ta =25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta =125℃ 50 R θJ-A Between junction and ambient 62.5 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and terminal 25 FABS 202 204 206 208 210 =0.25A 150 250 500

H igh Diode Semiconductor 0.4 Io(A) Ta( FIG1:Io-Ta Curve 160 sine wave R-load with heatsink 40 80 120 0.8 1.2 1.6 2.0 2.4 on alumina substrate 02 0 4 0 6 08 0 1 0 0 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150 Tj=25 FIG4:Typical Reverse Characteristics IFSM(A) 2 5 10 20 50 100 sine wave non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 8.3ms 1cycle IFSM 8.3ms IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25℃ Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V)

H igh Diode Semiconductor ABS ABS 0.225(5.72) Dimensions in inches and (millimeters) 0.059(1.5) 0.008(0.2) 0.174(4.4) 0.150(3.8) 0.006(0.15) 0.002(0.05) 0~10 O 0.006(0.15) 0.002(0.05) 0.033(0.85) 0.022(0.55) 0.21(5.4) 0.193(4.9) 0.059(1.50) MAX. -----

Reel Taping Specifications For Surface Mount Devices-ABS H igh Diode Semiconductor