FA01219A MITSUBISHI | Alldatasheet

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Technical content

MITSUBISHI SEMICONDUCTOR GaAs FET GaAs FET HYBRID IC Nov. ´97

DESCRIPTION

FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio.

FEATURES

  • Low voltage 3.5V
  • High gain 22.5B
  • High efficiency50%
  • High power 30.5dBm APPLICATION PDC0.8GHz Unit:mm RF INPUT RF OUTPUT VD1 GND GND GND VD2 VG1,2 2.0 6.0 0.8 10.0 GND GND tolerance:±0.2 Typ MaxMin LimitsParameter Test conditions ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Unit f Pin ρin ACP100 Total drain current 958 720 MHz dBm mA 925 Po=30.5dBm VD1 =V D2 =3.5V VG1,2=-2.5V ZG =ZL=50Ω (π/4DQPSK) – 640 dB dBc dBc Symbol Parameter Ratings -30 to +90 VD Pin TC (op) Tstg Unit Drain voltage Input power Operation case temperature Storage temperature 4.5 -20 to +85 V dBm Frequency Input power Return loss ±50kHz adjacent channel power ±100kHz adjacent channel power -47 -62 TcCondition Po≤30.5dBm ZG =ZL=50Ω 25˚C 25˚C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec 2fo 2nd harmonics 3fo 3rd harmonics Ditto (CW) – – -30 dBc dBc IDt ACP50 – – -30 4 5

MITSUBISHI SEMICONDUCTOR GaAs FET GaAs FET HYBRID IC Nov. ´97 TYPICAL CHARACTERISTICS 1 Frequency (MHz) 925.0 941.5 958.0 Pin Po Id1 Id2 Idt Ig1,2 -50k +50k -100k +100k 2SP 3SP RL (dBm) (dBm) (mA) (mA) (mA) (mA) (dBc) (dBc) (dBc) (dBc) (dBc) (dBc) (dB) 5.78 6.05 6.52 30.5 30.5 30.5 552 547 543 644 637 634 -1.86 -1.86 -1.86 -49.9 -51.7 -51.6 -49.2 -51.2 -51.6 -62.5 -63.6 -64.4 -62.6 -64.1 -64.6 -37.5 -37.4 -37.2 -49.2 -49.7 -50.2 -10.7 -9.4 -8.5 PO ,ACP vs Pin CHARACTERISTICS Pin(dBm) -5.0 5.0 10.0 0.0 f=925MHz VD1 =3.5V VD2 =3.5V VG =-2.5V PO ,ID s vs Pin CHARACTERSTICS Pin(dBm) -5 0 5 10 10-80 -70 -60 -40 -30 -50 35 1000 900 800 600 400 200 700 500 300 100 PO ACP+50k ACP-50k ACP+100k ACP-100k VD1 =3.5V,VD2 =3.5V,VG =-2.5V PO IDt ID2 ID1

MITSUBISHI SEMICONDUCTOR GaAs FET GaAs FET HYBRID IC Nov. ´97 TYPICAL CHARACTERISTICS 2 ACP vs f CHARACTERISTICS f(MHz) 908.5 925 941.5 958 974.5 -60 -55 -50 -40 -45 -65 ID vs f CHARACTERISTICS f(MHz) 908.5 941.5 800 958 974.5 100 500 650 925 1D2 Pin, R.L vs f CHARACTERISTICS f(MHz) 908.5 2.0 8.0 941.5 958 5.0 6.0 0.0 974.5 7.0 925 ID vs VD CHARACTERISTICS VD (V) 3 3.1 3.5 3.8 4 VD1 =3.5V VD2 =3.5V VG =-2.5V PO =30.5dBm SET -50k +50k +100k -100k 150 200 250 300 350 400 450 550 600 700 750 1D1 VD1 =3.5V VD2 =3.5V VG =-2.5V PO =30.5dBm SET 4.0 3.0 1.0 -14.0 -2.0 -8.0 -6.0 -18.0 -4.0 -10.0 -12.0 -16.0 VD1 =3.5V VD2 =3.5V VG =-2.5V PO =30.5dBm SET Pin R.L. 800 100 500 650 150 200 250 300 350 400 450 550 600 700 750 f=925MHz VG =-2.5V PO =30.5dBm SET IDt ID1 IDt ID2

MITSUBISHI SEMICONDUCTOR GaAs FET GaAs FET HYBRID IC Nov. ´97 EQUIVALENT CIRCUIT 1ST DRAIN 2ND DRAIN RF OUTPUT GND RF INPUT 1ST GATE 2ND GATE MATCHING CIRCUIT MATCHING CIRCUIT MATCHING CIRCUIT