FA01215 MITSUBISHI | Alldatasheet
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Technical content
MITSUBISHI SEMICONDUCTOR GaAs FET GaAs FET HYBRID IC Nov. ´97
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio.
FEATURES
- Low voltage 3.0V
- High gain 24dB(typ.)
- High efficiency50%
- High power 34.5dBm APPLICATION GSM IV Unit:mm 0.5±0.15 14.7 14.2 2 3.5 3.52 20.6 2 31 4 5 RF INPUT VG1,2 VD1 VD2 RF OUTPUT GND(FIN) Typ MaxMin LimitsParameter Test conditions ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol Unit f PO ht Igt rin 2fo,3fo Total efficiency Note1: Pin=13dBm,VD 1=V D 2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG 1,2=-2.0V,ZG =ZL=50Ω Note3: PO =34.5dBm(Pin controlled),VD 1=V D 2=3.0V(DC),VG 1,2=-2.0V,ZG =ZL=50Ω Note4: PO =0~34.5dBm(Pin controlled),VD 1=V D 2=3.0V(DC),VG 1,2=-2.0V,ρL=3:1(all phase),ZG =50Ω 915 MHz dBm 890 Note1 mA dB dBc Symbol Parameter Ratings -30 to +90 VD Pin TC (op) Tstg Unit Drain voltage Input power Operation case temperature. Storage temperature. 4.5 -20 to +85 V dBm Frequency Output power Total gate current Return loss 2nd harmonics, 3rd harmonics 34.5 -30 TaCondition PO ≤34.5dBm ZG =ZL=50Ω 25˚C 25˚C Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation. No degradation or destroy OSC.T Stability VSWR.T Load VSWR tolerance Note2 Note3 Note4 Note5 – -60 dBc
MITSUBISHI SEMICONDUCTOR GaAs FET GaAs FET HYBRID IC Nov. ´97 EQUIVALENT CIRCUIT 1ST DRAIN 2ND DRAIN RF OUTPUT GND(FIN) RF INPUT 1ST GATE 2ND GATE MATCHING CIRCUIT MATCHING CIRCUIT MATCHING CIRCUIT TYPICAL CHARACTERISTICS (Ta=25˚C) OUTPUT POWER, TOTAL EFFICIENCY vs INPUT POWER INPUT POWER P in(dBm) -30 -25 -20 -10 -5 -15 ηT PO VD =3.0V VG =-2.0V f=902.5MHz 0 5 10 15