F6617SPK GWSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Marking and pin assignment Enhancement Mode Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) CSPB2217-6 1,3 Sou rce1 4, 6 Sou rce2

2 Gate1

5 Gate2

Marking: 1. 6617: Product Code 2. YYMMX: Date Code 3. Solid dot: Pin 1 2 5 Topside view 1 3 4 6 S2 S2 6617 YYMMX 123 654 S1S1 G1 S2S2 G2 F6617SPK Dual N-Channel MOSFET

DESCRIPTION

The F6617SPK uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. SS(ON) GS(MAX) VSSS R SS(o n) TYP I S 20V 12A 4.9mΩ@4.5V 5.1mΩ@4.0V 5.2mΩ@3.8V 5.7mΩ@3.1V 6.6mΩ@2.5V SymbolParameter Limit Unit VSSS Source to Source Voltage 20 V VGSS ±12 V IS Source Current(DC) 12 A ISP Source Current (Pulsed) A PT W TchChannel Temperature 150 ℃ TSTG Storage Temperature Range -55 To 150 ℃ Gate-Source Voltage Total Power Dissipation 120 ① ② ① 2.0

MOSFET ELECTRICAL CHARACTERISTICSTa=25℃unlessotherwise specified Vout Vin Vout PW=100μS D=1% td(on) tr td(off) tf Parameter Symbol Condition Min Typ Max Unit Static Parameters Source to Source Breakdown Voltage BVSSS IS=1mA ,VGS=0V 20 V Zero-Gate Voltage Source Current ISSS VSS=16V,VGS=0V 100 nA Gate to Source Leakage Current IGSS VSS=0V,VGS= ±10V ±10 μA Gate to Source Threshold Voltage VGS(th) VSS=VGS, IS=250μA 0.4 1.2 V Source to Source On-state Resistance RSS(on) VGS=4.5V,IS=3A 2.9 4.9 6.8 mΩ VGS=4.0V,IS=3A 3.0 5.1 7.1 mΩ VGS=3.8V,IS=3A 3.1 5.2 7.3 mΩ VGS=3.1V,IS=3A 3.4 5.7 mΩ Input Capacitance Ciss VSS=10V, VGS=0V,f=1kHz 2609 pF Output Capacitance Coss 362 pF Reverse Transfer Capacitance Crss 295 pF Turn-on Delay Time td(on) VDD=10V,IS=5A, VGS=4.0V 0.9 μS Turn-on Rise Time tr 2.6 μS Turn-off Delay Time td(off) 5.7 μS Turn-off Fall Time tf 3.9 μS VDD=10V IS=5A RL=2.0Ω Vin D2 4.0V S1 90 % 10 % 90 % 90 % 10 % 10 % 2.t = 10 ms , Duty Cycle = 1 %. 3.When FET1 is measured,G2 and S2 are short-circuited. 8.0 Qg Total Gate Charge VSS=10V,IS=8A,VGS=6.0V nC VF(S-S) Diode Forward Voltage VGS=0V,IS=1A 1.0 V 34.7 0.85 Qg1s1 Gate1-source1 charge nC 5.9 Qg1s2 Gate1-source2 charge nC 11.8 VGS=2.5V,IS=3A 4.0 6.6 mΩ9.2 VSS=0V,VGS= ±5V ±1.0 F6617SPK Dual N-Channel MOSFET

0.0 2.0 25 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 1.0 0.01 0.1 2 4 8 10 4.5 5.0 5.5 6.0 6.5 7.0 VSS=8V Pulsed SOURCE CURRENT IS (A) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE VGS (V) IS-VGS From left to right Pulsed IS=250uA Threshol d Voltage THRESHOLD VOLTAGE VTH (V) 50 75 100 JUNCTION TEMPERATURE TJ (℃) From left to right VF Pulsed Opposite FET is biased with Vgs=4.5V DIODE FORWARD CURRENT CURRENT IF (A) 0.2 0.4 0.6 0.8 BODY DIODE FORWARD VOLTAGE VF (V) IF —— 4.0V 3.8V 3.1V 2.5V TJ=25℃ Pulsed ON-RESISTANCE RSS(ON) (m) SOURCE CURRENT IS (A) IS— —RSS(ON) VGS= 4.5V TJ=25℃ Pulsed From left to right IS - - VSS SOURCE CURRENT IS (A) SOURCE TO SOURCE VOLTAGE VSS (V) 0 8 In descending order RSS(ON)— — VGS ON-RESISTANCE RSS(ON) (m) 2 4 6 GATE TO SOURCE VOLTAGE VGS (V) Pulsed IS=3A Typical Characteristics F6617SPK Dual N-Channel MOSFET

0.1 10 100 1000 10000 VSS=10V Pulsed Gate Charge THRESHOLD VOLTAGE VTH (V) 15 20 GATE CHARGE, QG (nC) Crss Coss Ciss Pulsed f=1kHz CAPACITANCE C (pF) SOURCE TO SOURCEVOLTAGE VSS (V) Capaci tances 1E-6 1E-5 1E-4 1E-3 1 10 100 1000 1E-3 0.01 0.1 In descending order NORMALIZED THERMAL IMPEDENCE, Zthja 0.01 0.1 SQUARE WAVE PULSE DURATION, tp (sec) NORMALIZED TRAISIENT THERMAL IMPENDANCE D=TON/T TJ,PK=TA+PDM×Zthia×RθJA MAXIMUM FORWARD BIASED SAFE OPERATING AREA 0.01 100 0.1 100 1000 DC 10ms 10us 100us 1ms 100ms BVsss ISP RSSon Limited RθJA=62.5℃/W TA=25℃ Single pulse SOURCE CURRENT IS (A) 0.1 1 10 SOURCE TO SOURCE VOLTAGE VSS (V) Typical Characteristics F6617SPK Dual N-Channel MOSFET

+0.05 -0.05 F6617SPK Dual N-Channel MOSFET Plastic surface mounted package; 6 leads CSPB2217 PACKAGE OUTLINE