F5H2101 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • The F5H2101 consists of two chips which are equivalent to the 2SA2210 encapsulated in a package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO --50 V Collector-to-Emitter Voltage V CEO --50 V Emitter-to-Base Voltage V EBO -- 6 V Collector Current I C --15 A PW=100ms , duty cycle≤1% - -20 A Collector Current (Pulse) I CP PW ≤10µs, duty cycle≤10% - -25 A Base Current I B -- 3 A Collector Dissipation P C Tc=25°C3 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007FA TI IM TC-00000620 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. F5H2101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

No. A0725-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =- -40V, IE=0A - -10 µA Emitter Cutoff Current I EBO VEB =- -4V, IC =0A - -10 µA DC Current Gain h FE VCE =- -2V, IC =- -1A 150 450 Gain-Bandwidth Product f T VCE =- -10V, IC =- -1A 140 MHz Output Capacitance Cob V CB =- -10V, f=1MHz 215 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =- -7A, IB=- -350mA - -200 - -500 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =- -7A, IB=- -350mA - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =- -100µA, IE=0A - -50 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =- -1mA, RBE =∞ --50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -100µA, IC =0A - -6 V Turn-ON Time t on See specified Test Circuit. 60 ns Storage Time t stg See specified Test Circuit. 270 ns Fall Time t f See specified Test Circuit. 20 ns Note : The specifications shown above are for each individual transistor. Package Dimensions Electrical Connection unit : mm (typ) 7526-001 Switching Time Test Circuit VR R L VCC = - -20VVBE =5V IC =20IB1 = - -20IB2 = - -7A + +50Ω INPUT OUTPUT R B 100µF 470µF PW=20 µs IB1 IB2D.C.≤1% 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) SANYO : TO-220FI5H 10.0 4.5 2.8 7.2 3.5 3.6 2.54 1.27 2.75 2.4 16.014.0 2.4 1.27 2.54 12 3 45 0.9 0.7 0.5 3.2 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) Top view TR1 TR2

No. A0725-3/5 IT12151 --2 --14 --12 --10 --8 --6 --4 --16 --18 --20 IT12152 --1 --7 --6 --5 --4 --3 --2 --8 --9 --10 IB =0mA --20mA --50mA IB =0mA --700m A --400m A --500m A --600m A --300m A --200m A --100m A --0.1 - -1.023 5 7 2 --1035 7 2 35 7 100 1000 IT12158 --0.1 --1.0 --0.01 Ta=75 25°C --25 Ta= --25°C 25°C 75°C IC / IB =20 IT12156 100 1000 V CE =10V IT12154 100 1000 --0.01 325 --0.172 3 5 --1.0 - -1072 2 35 5 37 Ta=75°C 25°C --25°C V CE =2V --25 --20 --5 --15 --10 IT12153 V CE =2V --25 °CTa=75 IT12155 IT12157 100 1000 --0.01 325 --0.173 25 7 3 25 7--1.0 - -10 23 5 Ta=25°C VCE = --2.0 V --0.7 V --0.5 V--0.2 V --1.0 V f=1MHz From top --1600m A --1400m A --1200m A --1000m A --900m A --800m A --10mA --20mA --150m A --200m A --100m A --50m A --30m A From top --500m A --450m A --400m A --350m A --300m A --250m A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, V CE -- V Collector Current, IC -- A IC -- VCE Collector Current, IC -- A Cob -- VCB VCE (sat) -- IC fT -- IC hFE -- ICIC -- VBE hFE -- IC Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V

No. A0725-4/5 IT12166 --0.1 23 5 7 --1.0 23 5 7 23 5 7--10 IT12165 --0.1 --1.0 --0.01 IT12167 DC operation IC = --15A ICP = --25A PT=500 µs100ms 10ms 1ms 2.5 0.5 200 1.0 1.5 2.0 40 60 80 100 120 140 160 160200 40 60 80 100 120 140 --10 VBE (sat) -- ICVCE (sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V --1.0 IT12160 IC / IB =20 Ta= --25°C 25°C 75°C IT12159 --0.1 --1.0 --0.01 Ta=75 25°C --25 IC / IB =50 Ta= --25°C 25°C 75°C PC -- TaForward Bias A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C No heat sink PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °C Tc=25°C Single pulse

No. A0725-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice.