F3190DW GWSEMI | Alldatasheet

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Technical content

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) (MAX) Package ID (MAX) TA = +25° C 30V 250mΩ @ VGS = 10V SOT363 335mΩ @ VGS = 4.5V 0.75A

Description

has been designed to minimize the on state resistance DS(ON ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications

C ontrol Power M anagement F unctions Load Switch Features and Benefits Low On Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead Free & Fully RoHS C ompliant (Note s Halogen and Antimony Free. “Green” Device (Note Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Q1 N C hannel Gate Protection Diode Q2 N C hannel SOT-363 : YM Y M F3190DW

Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage V DSS V Gate Source Voltage V GSS V Continuous Drain Current (Note ) V GS V Steady State T A C T A C I D 1000 900 m A t s T A C T A C I D 1300 1000 m A Maximum Continuous Body Diode F orward Current (Note I S 0.5 A Pulsed Drain Current 10µ s P ulse, D uty C ycle I DM 9.6 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note T A = +25° C P D 0.32 W Thermal Resistance, Junction to Ambient (Note S teady State R θ JA 395 ° C/W Total Power Dissipation (Note T A = +25° C P D 0.35 W Thermal Resistance, Junction to Ambient (Note S teady State R θ JA 320 ° C/W Thermal Resistance, Junction to Case R θ J C 143 Operating and Storage Temperature Range T T STG 55 to 150 Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note Drain Source Breakdown Voltage BV DSS V V GS = 0V, I D A Zero Gate Voltage Drain Current T C 25° C I DSS μ A V DS V, V GS = 0V Gate Source Leakage I GSS μ A V GS = ± V, V DS = 0V ON CHARACTERISTICS (Note Gate Threshold Voltage V GS( TH 0.7 2.0 V V DS = V GS , I D 250 μA Static Drain Source On Resistance R DS(ON) 250 m Ω V GS V, I D 1.3 A 335 V GS .5V, I D 0mA Diode Forward Voltage V SD 1.2 V V GS = 0V, I S 50mA DYNAMIC CHARACTERISTICS (Note Input Capacitance C iss pF V DS V, V GS = 0V f = 1.0MHz Output Capacitance C oss pF Reverse Transfer Capacitance C rss pF Gate Resistance R g 69.8 Ω f 1MHz , V GS 0V, V DS Total Gate Charge V GS 4.5 V Q g 0.9 nC V DS V, I D 250m A Total Gate Charge V GS V Q g 2.0 nC Gate Source Charge Q gs nC Gate Drain Charge Q gd nC Turn On Delay Time t ON 4.5 ns V DD V, V GS R G Ω I D 00mA Turn On Rise Time t R 8.9 ns Turn Off Delay Time t OFF ns Turn Off Fall Time t F 15.6 ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1”  1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. F3190DW

Plastic surface mounted package; 6 leads SOT-36 PACKAGE OUTLINE F3190DW