F30N10G GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
- VDS=100V, ID=30A
- RDS(ON)=17mΩ@VGS=10V(Typ.)
- RDS(ON)=22mΩ@VGS=4.5V(Typ.)
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package D G Schematic diagram Main Applications
- Battery Protection
- Load Switch
- Power Management TO-252 F30N10G N-Channel Enhancement MOSFET
Electrical Characteristics (TAmbient=25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 Volt IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 1.2 1.6 2.5 Volt RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A 17 23 mΩ VGS=4.5V, ID=20A 22 38 mΩ Dynamic Characteristics Ciss Input Capacitance VDD=15V, VGS=0V , F=1MHz 1600 pF Coss Output Capacitance 139 pF Crss Reverse Transfer Capacitance 11 pF Switching Characteristics td(on) Turn-on Delay Time VDD=50V, VGS=10V, RGEN=1.6Ω 6 nS tr Turn-on Rise Time 2 nS td(off) Turn-Off Delay Time 18 nS tf Turn-Off Fall Time 2 nS Qg Total Gate Charge VDS=50V, ID=20A, VGS=10V 26 nC Qgs Gate-Source Charge 7.4 nC Qgd Gate-Drain Charge 3.8 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage VGS=0V, IS=1A 0.72 1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production F30N10G N-Channel Enhancement MOSFET
Typical Electrical and Thermal Characteristics F30N10G N-Channel Enhancement MOSFET
F30N10G N-Channel Enhancement MOSFET PACKAGE OUTLINE TO-252