F2N10A GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
Features
- VDS=100V, ID=2A
- RDS(ON)=220mΩ@VGS=10V(Typ.)
- RDS(ON)=240mΩ@VGS=4.5V(Typ.)
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package G S Schematic diagram Main Applications
- Battery Protection
- Load Switch
- Power Management F2N10A N-Channel Enhancement MOSFET SOT-23 D G S
Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0 V, ID=250μA 100 Volt IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA On Characteristics(Note 3) VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.4 2.0 Volt RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2.0A 220 260 mΩ VGS=4.5V, ID=2.0A 240 280 mΩ Dynamic Characteristics(Note 4) Ciss Input Capacitance VDD=50V, VGS=0V , F=1MHz 190 pF Coss Output Capacitance 22 pF Crss Reverse Transfer Capacitance 13 pF Switching Characteristics(Note 4) td(on) Turn-on Delay Time VDD=50V, VGS=10V, RGEN=1Ω 6 nS tr Turn-on Rise Time 10 nS td(off) Turn-Off Delay Time 10 nS tf Turn-Off Fall Time 6 nS Qg Total Gate Charge VDS=50V, ID=1.3A, VGS=10V 5.2 nC Qgs Gate-Source Charge 0.75 nC Qgd Gate-Drain Charge 1.4 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage(Note 3) VGS=0V, IS=2A 0.76 1.2 V IS Diode Forward Current(Note 2) 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production F2N10A N-Channel Enhancement MOSFET
N-Channel Enhancement MOSFET Plastic surface mounted package; 3 leads PACKAGE OUTLINE SOT-23 c L A D e b E 8° max.