F08P06S GWSEMI | Alldatasheet
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Features
VDS=-60V, ID=-8A RDS(ON)=570mΩ@VGS=-10V(Typ.) RDS(ON)=105mΩ@VGS=-4.5V(Typ.) S1 S2 Schematic diagram Main Applications Battery Protection Load Switch Power Management D1 D1 D2 D2 G2S2G1S1 SOP8 Top View F08P06S Dual P Enhancement MOSFET
Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS V, I D 250μA Volt I DSS Zero Gate Voltage Drain Current V DS V, V GS μ A I GSS Gate Body Leakage Current V GS 20V, V DS =0V 100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS V GS I D =250 μA Volt R DS(ON) Drain Source On State Resistance V GS V, I D 5.5 A m Ω V GS 4.5 V, I D 4.5 A mΩ Dynamic Characteristics C iss Input Capacitance V D D V V GS =0V , F =1MHz pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance pF Switching Characteristics td(o Turn on Delay Time V DD V, R GEN Ω I D V nS tr Turn on Rise Time nS td(off) Turn Off Delay Time nS tf Turn Off Fall Time nS Q g Total Gate Charge V D S V, I D A V GS V nC Q gs Gate Source Charge nC Q gd Gate Drain Charge nC F08P06S
Typical Electrical and Thermal Characteristics F08P06S
C 0.25mm L A B e D S E H DIM MILLMETERS INCHES MIN MAX MIN MAX A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.008 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 L 0.50 0.93 0.020 0.037 S 0.44 0.64 0.018 0.026 F08P06S PACKAGE OUTLINE Plastic surface mounted package; SOP8