ETSC1208-1F MICROSS | Alldatasheet

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Technical content

ETSC1208 1µF 935.124.42S.710 Key Features

  • Low Profile (250µm)
  • High Stability of Capacitance Value;
  • Temperature <±1% (-55 to +200°C)
  • Voltage < 0.1 % / V
  • Negligible Capacitance Loss through Ageing
  • High Reliability
  • Low Leakage Current down to 100pA
  • High Operating Temperature (200°C)
  • High Reliability
  • Different Pad finishing available (Al, Au, Ni/Au) Key Applications
  • All Applications up to 200°C, such as Defense. Downhole & Automotive Industries.
  • High Reliability Applications
  • Decoupling / Filtering / Charge Pipe (ie. Motor Management, Temperature Sensors)
  • Replacement of X7R and C0G dielectrics
  • Downsizing 2 & 4 Hellesdon Park Road, Norwich, Norfolk, NR6 5DR +44 (0)1603 788967 www.micross.com chipcomponents@micross.com Pb ETSC provides the highest capacitor stability over the full -55°C/+200°C temperature range in the market with a TC<1%. The IPDiA technology offers industry leading performances relative to failure rate with a FIT <0.017. This technology also offers high reliability, up to 10 times better than alternative capacitor technologies & eliminates cracking phenomena. This silicon based technology is RoHS compliant and compatible with lead free reflow soldering process. Part Number Breakdown Size: Unit: Value ie. 100nF/0404 case (EMSC type) 935.12.42F.610 Voltage: F = 0303 C= 0503 0 = 10f 5 = 1n 10 68 1 = 20V H = 0202 V = 0402 1 = 0.1p 6 = 10n 15 4 = 11V I = 0101 Y = 0201 2 = 1p 7 = 0.1u 22 6 = 50V S = 0404 X = 2016 3 = 10p 8 = 1u 33 7 = 30V V = 0504 4 = 0.1n 9 = 10u 47 Parameters Value Capacitance Range 10nF to 4.7µF Capacitance Tolerances ±15% Operating Temperature Range -55°C to 200°C Storage Temperatures -70°C to 215°C Temperature Coefficient <±1%, from -55°C to +200°C Breakdown Voltage (BV) 20, 30, 50, 90, 11V Capacitance Variation Vs. RVDC 0.1% IV (from 0 V to RVDC) Equivalent Serial Inductor (ESL) Max 100pH Equivalent Serial Resistor (ESR) Max 0.1Ω Insulation Resistance 50GΩ min @ RVDC, 25°C 20GΩ min @ RVDC, 200°C Ageing Negligible, < 0.001% / 1000h Reliability FIT < 0.017 parts / billion hours Capacitor Height Max 100µm Embedded & Wirebond Temperature Silicon Capacitor