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Technical content

Product Features Applications

  • Up to 6GHz • WiMAX, LTE, WCDMA, GSM
  • 14W Saturated Power @ 48V, 2.6GHz • Multi-Band, Multi-Mode
  • 60% Drain Efficiency @ Psat, 2.6GHz • Multi-Carrier
  • 35% Drain Efficiency @ 35dBm, 2.6GHz • High Efficiency, Doherty Amplifier ETQ2014PDFN66726L-Q2 Typical Single-Carrier LTE Performance (VDS= +48V, TC=25℃, 50Ω) Note *1 Measured in the ETQ2014P test board amplifier circuit, under LTE 10MHz, PAR 7.5dB @0.01% probability on CCDF Absolute Maximum Ratings Drain Efficiency[%] 37.3 ETQ2014P Frequency[MHz] Average Power*1Peak Power 15.8 Power[W] 63.6 Drain Efficiency[%] 3.2 Power[W] 18.3 Gain[dB] ACLR[dBc] -29.22685 Rating Symbol Condition Value Unit Note *1 Current Limit for long term, reliable operation. *2 Continuous use at maximum temperature will affect MTTF. *3 Refer to the Application Note(AN-002) on soldering - "Solder Condition for RFHIC's GaN Device" Thermal Characteristics 8.10 *1 8.91 *2 Note *1 Measured for the ETQ2014P at dissipation power of 17.3W. *2 Measured for the ETQ2014P at dissipation power of 1.57W. IGMAX PDISS TSTG TC TJ Thermal Resistance, Junction to Case RθJC ℃/W Tc=85℃ 225 Maximum Drain Current*1 IDMAX 0.75 A Tc=25℃ Soldering Temperature*3 TS mA W 150 -10, +2 2.1 17.3 -65, +150 Tc=85℃ Tc=25℃ Tc=25℃ 30 seconds Tc=25℃ Drain to Source Voltage Gate to Source Voltage Operating Voltage Maximum Forward Gate Current Power Dissipation Storage Temperature Case Operating Temperature Operating Junction Temperature*2 VDSS VGS VDD Rating Symbol Value -40, +150 Unit Condition 245 ℃ V V V DC Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Electrical Characteristics (TC=25℃ unless otherwise noted) VDS = ID = VDS = ID = VDS = VGS = VGS = ID = VGS = VDS = VGS = VDS = VDS = IDQ = VDS = IDQ = POUT = mA 120V Gate Leakage Current -8V IGLKG -0.46 - - mA 120V - Drain Leakage Current -8V IDLKG Gate Threshold Voltage 10V VGS(TH) VDC 2.1mA Characteristics Conditions Symbol Min -3.8 RF Characteristics (Fc=2595MHz unless otherwise noted) V 2.1mA Saturated Output Power*3,6 48V PSAT Drain-Source Breakdown Voltage -8V VBR VDC 50mA Saturated Drain Current*2 6V IDS A Gate Quiescent Voltage 48V VGS(Q) 150 0.84- 1.7 50mA - -W -3.0 -2.6 2.1 -2.3 DC Characteristics Typ Max Unit 50mA PSAT Pulsed Pulsed Drain Efficiency*3 48V η5 5 6 0 VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = VDS = IDQ = POUT = Note *1 Measured on wafer prior to packaging. *2 Scaled from PCM data. *3 Pulse width 100μsec, Duty Cycle 10%. *4 Measured in the ETQ2014P-2600MHz test board amplifier circuit, under LTE 10MHz, PAR7.5dB @0.01% probability on CCDF. *5 Measured in the ETQ2014P-2600MHz test board amplifier circuit. No damage at all phase angles. *6 Psat is defined as ΔPout/ΔPin<0.1, where ΔPin is increased input power, ΔPout is increased output power. Output Mismatch Stress*3, 5 48V VSWR - - 10:1 ψ50mA 50mA 35dBm 32.0 35.0 - % Modulated Drain Efficiency*4 48V η PSAT Pulsed 18.5 - dB -30.0 dBc50mA 35dBm -28.0 LTE Linearity 48V ACLR Modulated Gain*4 48V GBR50mA 35dBm 17.0 Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Typical Pulsed Signal Performance (Tc=25℃, Measured in the ETQ2014P-2600MHz test board amplifier circuit ) VDS = 48V, IDQ = 50mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the ETQ2014P-2600MHz test board amplifier circuit ) Peak Power Drain Effiiciency 100 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 Drain Efficiency [%] Peak Power [dBm] Frequency [MHz] Peak Power, Drain Efficiency vs. Frequency Power Gain Drain Efficiency 19 21 23 25 27 29 31 33 35 37 39 41 43 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Pulsed Power Gain, Drain Efficiency vs. Output Power Power Gain 2500MHz Power Gain 2595MHz Power Gain 2690MHz Drain Efficiency 2500MHz Drain Efficiency 2595MHz Drain Efficiency 2690MHz PARC 0 45 LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 22 Power Gain, Drain Efficiency vs. Output Power PAVG = 35dBm, VDS = 48V, IDQ = 50mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Power Gain Drain Effiiciency ACLR -40 -35 -30 -25 -20 -15 -10 2400 2450 2500 2550 2600 2650 2700 2750 2800 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 19 21 23 25 27 29 31 33 35 37 39 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain 2500MHz Power Gain 2595MHz Power Gain 2690MHz Drain Efficiency 2500MHz Drain Efficiency 2595MHz Drain Efficiency 2690MHz PARC ACLR -50 -40 -30 -20 -10 20 22 24 26 28 30 32 34 36 38 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 2500MHz PARC 2595MHz PARC 2690MHz ACLR-L 2500MHz ACLR-L 2595MHz ACLR-L 2690MHz ACLR-U 2500MHz ACLR-U 2595MHz ACLR-U 2690MHz Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the ETQ2014P-2600MHz test board amplifier circuit ) 2-tone Power = 39.5dBm, VDS = 48V, IDQ = 50mA Typical Small Signal Performance (Tc=25℃, Measured in the ETQ2014P-2600MHz test board amplifier circuit ) -55 -50 -45 -40 -35 -30 -25 -20 -15 1 10 100 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain Input Return Loss vs Frequency μFactor vs Frequency PIN = 0dBm, V DS = 48V, IDQ = 50mA Small Signal Gain IRL -30 -20 -10 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 500 1000 1500 2000 2500 3000 3500 4000 μ' Factor μFactor Frequency [MHz] μFactor vs. Frequency Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Test Board Component Layout(2600MHz) Description Part Number ManufacturerPart C9 0.5pF High Q Capacitor 201CHA0R5BSLE TEMEX TEMEX TR1 14W GaN Transistor ETQ2014P RFHIC 6.8pF High Q Capacitor 201CHA6R8CSLE TEMEX CON1 DC Connector 5268-06A MOLEX 20 ohm Chip Resistor MCR10EZPJ200 ROHMR1 201CHA1R2BSLE TEMEX C3 - - - 200 ohm Chip Resistor MCR10EZPJ201 ROHM C1 2.2pF High Q Capacitor 201CHA2R2CSLE TEMEX C2 1.2pF High Q Capacitor GRM1885C1H100JA01D MURATA C5 100pF Chip Capacitor GRM1885C1H101JA01D MURATA C6 1nF Chip Capacitor C4 10pF Chip Capacitor C13 10pF High Q Capacitor 201CHA100JSLE TEMEX C14 100pF High Q Capacitor 201CHA101JSLE C12 - C10 0.8pF High Q Capacitor C15 10uF MLCC RS80R2A106M MARUWA C16 GRM188R71H102KA01D MURATA C7 1uF Chip Capacitor GRM188R71H105KA01D MURATA C8 Polymer Capacitor 201CHA0R8BSLE TEMEX C11 1.8pF High Q Capacitor 201CHA1R8CSLE TEMEX TCJA106M016R0200 AVX Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Typical Pulsed Signal Performance (Tc=25℃, Measured in the ETQ2014P-2100MHz test board amplifier circuit ) VDS = 48V, IDQ = 50mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the ETQ2014P-2100MHz test board amplifier circuit ) Peak Power Drain Efficiency 100 2060 2080 2100 2120 2140 2160 2180 2200 2220 Drain Efficiency [%] Peak Power [dBm] Frequency [MHz] Peak Power, Drain Efficiency vs. Frequency Power Gain Drain Efficiency 19 24 29 34 39 44 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Pulsed Power Gain, Drain Efficiency vs. Output Power Power Gain 2110MHz Power Gain 2140MHz Power Gain 2170MHz Drain Efficiency 2110MHz Drain Efficiency 2140MHz Drain Efficiency 2170MHz PARC 6 45 LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 22 Power Gain, Drain Efficiency vs. Output Power PAVG = 35dBm, VDS = 48V, IDQ = 50mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Power Gain Drain Effiiciency ACLR PARC -48 -42 -36 -30 -24 -18 -12 2080 2100 2120 2140 2160 2180 2200 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 19 21 23 25 27 29 31 33 35 37 39 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain 2115MHz Power Gain 2140MHz Power Gain 2165MHz Drain Efficiency 2115MHz Drain Efficiency 2140MHz Drain Efficiency 2165MHz PARC ACLR -45 -35 -25 -15 19 21 23 25 27 29 31 33 35 37 39 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 2115MHz PARC 2140MHz PARC 2165MHz ACLR-L 2115MHz ACLR-L 2140MHz ACLR-L 2165MHz ACLR-U 2115MHz ACLR-U 2140MHz ACLR-U 2165MHz Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the ETQ2014P-2100MHz test board amplifier circuit ) 2-tone Power = 39.5dBm, VDS = 48V, IDQ = 50mA Typical Small Signal Performance (Tc=25℃, Measured in the ETQ2014P-2100MHz test board amplifier circuit ) -55 -45 -35 -25 -15 1.00 10.00 100.00 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain Input Return Loss vs Frequency μFactor vs Frequency PIN = 0dBm, V DS = 48V, IDQ = 50mA Small Signal Gain IRL -15 -10 -10 1800 1900 2000 2100 2200 2300 2400 2500 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 500 1000 1500 2000 2500 3000 3500 4000 μ' Factor μFactor Frequency [MHz] μFactor vs. Frequency Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Test Board Component Layout(2100MHz) Part Description Part Number Manufacturer TR1 14W GaN Transistor ETQ2014P RFHIC C11, C12 10pF High Q Capacitor 201CHA100JSLE TEMEX C13 100pF High Q Capacitor 201CHA101JSLE TEMEX C14, C15 - - - C16 10uF MLCC RS80R2A106M MARUWA CON1 DC Connector 5268-06A MOLEX C5 100F Chip Capacitor GRM1885C1H101JA01D MURATA C6 1nF Chip Capacitor GRM188R71H102KA01D MURATA C7 1uF Chip Capacitor GRM188R71H105KA01D MURATA C8 Polymer Capacitor TCJA106M016R0200 AVX C10 1.8pF High Q Capacitor 201CHA1R8CSLE TEMEX R2 200 ohm Chip Resistor MCR10EZPJ201 ROHM C1 1.5pF High Q Capacitor 201CHA1R5BSLE TEMEX C2 5.1pF High Q Capacitor 201CHA5R1CSLE TEMEX C3, C9 0.7pF High Q Capacitor 201CHA0R7BSLE TEMEX C4 10F Chip Capacitor GRM1885C1H100JA01D MURATA R1 30 ohm Chip Resistor MCR10EZPJ300 ROHM Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Typical Pulsed Signal Performance (Tc=25℃, Measured in the ETQ2014P-800MHz test board amplifier circuit) VDS = 48V, IDQ = 50mA, Pulse Width = 100μsec, Duty Cycle = 10% Typical LTE Signal Performance (Tc=25℃, Measured in the ETQ2014P-800MHz test board amplifier circuit) Peak Power Drain Effiiciency 100 700 750 800 850 900 950 Drain Efficiency [%] Peak Power [dBm] Frequency [MHz] Peak Power, Drain Efficiency vs. Frequency Power Gain Drain Efficiency 19 24 29 34 39 44 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Pulsed Power Gain, Drain Efficiency vs. Output Power Power Gain 770MHz Power Gain 822.5MHz Power Gain 875MHz Drain Efficiency 770MHz Drain Efficiency 822.5MHz Drain Efficiency 875MHz PARC 6 45 LTE Power Gain, Drain Efficiency, ACLR, PARC vs. Frequency 60 22 Power Gain, Drain Efficiency vs. Output Power PAVG = 35dBm, VDS = 48V, IDQ = 50mA LTE 10MHz BW, PAPR=7.5dB @ 0.01% Probability on CCDF Power Gain Drain Effiiciency ACLR -48 -42 -36 -30 -24 -18 -12 700 750 800 850 900 950 ACLR [dBc], PARC [dB] Power Gain [dB], Drain Efficiency [%] Frequency [MHz] Power Gain Drain Effiiciency ACLR-L ACLR-U PARC Power Gain Drain Efficiency 19 21 23 25 27 29 31 33 35 37 39 Drain Efficiency [%] Power Gain [dB] Output Power [dBm] Power Gain 770MHz Power Gain 822.5MHz Power Gain 875MHz Drain Efficiency 770MHz Drain Efficiency 822.5MHz Drain Efficiency 875MHz PARC ACLR -45 -40 -35 -30 -25 -20 -15 19 21 23 25 27 29 31 33 35 37 39 ACLR-L [dBc], ACLR-U [dBc] PARC[dB] Output Power [dBm] PARC, ACLR vs. Output Power PARC 770MHz PARC 822.5MHz PARC 875MHz ACLR-L 770MHz ACLR-L 822.5MHz ACLR-L 875MHz ACLR-U 770MHz ACLR-U 822.5MHz ACLR-U 875MHz Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Typical 2-tone Intermodulation Imbalance Performance (Tc=25℃, Measured in the ETQ2014P-800MHz test board amplifier circuit) 2-tone Power = 39.5dBm, VDS = 48V, IDQ = 50mA Typical Small Signal Performance (Tc=25℃, Measured in the ETQ2014P-800MHz test board amplifier circuit) -45 -35 -25 1.00 10.00 100.00 Intermodulation [dBc] Tone Spacing [MHz] Intermodulation vs. Tone Spacing IM3-L IM5-L IM3-U IM5-U Small Signal Gain Input Return Loss vs Frequency μFactor vs Frequency PIN = 0dBm, V DS = 48V, IDQ = 50mA Small Signal Gain IRL -25 -20 -15 -10 -10 250 450 650 850 1050 1250 1450 Return Loss [dB] Small Signal Gain [dB] Frequency [MHz] Small Signal Gain, Input Return Loss vs. Frequency 0 500 1000 1500 2000 2500 3000 3500 4000 μ' Factor μFactor Frequency [MHz] μFactor vs. Frequency Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Test Board Component Layout(800MHz) Part Description Part Number Manufacturer CON1 DC Connector 5268-06A MOLEX TR1 14W GaN Transistor ETQ2014P RFHIC C6 1nF Chip Capacitor GRM188R71H102KA01D MURATA C7 Polymer Capacitor TCJA106M016R0200 AVX C8 10uF MLCC RS80R2A106M MARUWA C9, C13 - - - C11 39pF High Q Capacitor 201CHA390JSLE TEMEX C1 2.0pF High Q Capacitor 201CHA2R0CSLE TEMEX C2 1.3pF High Q Capacitor 201CHA1R3BSLE TEMEX C3, C10, C12 100pF High Q Capacitor 201CHA101JSLE TEMEX C4 10F Chip Capacitor GRM1885C1H100JA01D MURATA C5 100F Chip Capacitor GRM1885C1H101JA01D MURATA R1 20 ohm Chip Resistor MCR10EZPJ200 ROHM R2 200 ohm Chip Resistor MCR10EZPJ201 ROHM R3 5.6 ohm Chip Resistor MCR10EZPJ5R6 ROHM Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P Pin No Drain N.C. Source Function N.C. Gate N.C. Pin Description N.C. Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0

GaN Power Transistors ETQ2014P

Revision History

1.0 Release Date January, 2018 Data Sheet StatusDescription Initial release of datasheetETQ2014P Version Korean Facility : 82-31-8069-3036 / rfsales@rfhic.com US Facility : 919-677-8780 / sales@rfhicusa.com All specifications may change without notice Version 1.0 RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at +1-919-677-8780. For all other inquiries, please contact the International Sales Team at 82-31-8069-3036 or Korean Domestic Sales Team 82-31-8069-3034.