ET840 ESTEK | Alldatasheet
Document overview
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Technical content
9 Amps，， ，，500Volts
■ Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers ■ Features /circle6 R DS(ON) = 0.80Ω@V GS = 10 V /circle6 Low gate charge ( typical 30nC) /circle6 Fast switching capability /circle6 Avalanche energy specified /circle6 Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings c =25℃,unless otherwise specified) Ratings Parameter Symbol TO-220 TO-220F Units Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V T c =25℃ 9.0 9.0 A Drain Currenet Continuous T c =100℃ I D 5.4 5.4 A Drain Current Pulsed (Note 1) I DP 36 36 A Repetitive (Note 1) E AR 13.9 mJ Avalanche Energy Single Pulse (Note 2) E AS 360 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns T c =25℃ 139 45.5 W Total Power Dissipation Derate above 25℃ P D 1.11 0.36 W/ ℃ Junction Temperature T J +150 ℃ Storage Temperature T STG -55~+150 ℃ Drain current limited by maximum junction temperature. ET840 BEIJING ESTEK ELECTRONICS CO.,LTD
Thermal Resistance Junction-Ambient R thJA 62.5 Thermal Resistance, Case-to-Sink Typ. R thCS 0.5 -- Thermal Resistance Junction-Case R thJC 0.90 2.75 ℃/W
Electrical Characteristics
J =25℃,unless Otherwise specified.） 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, I AS =9.0 A, V DD = 50V, R G = 25 Ω, Starting TJ = 25°C 3. I SD ≤ 9.0 A, di/dt ≤ 200A/μs, V DD ≤BV DSS , Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V,I D =250µA 500 -- -- V V DS =500V,V GS =0V -- -- 1 µA Zero Gate Voltage Drain Current I DSS V DS =400V,T C =125℃ -- -- 10 µA Forward V GS =30V,V DS =0V -- -- 100 nA Gate-Body Leakage Current Reverse I GSS V GS =-30V,V DS =0V -- -- -100 nA Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D On Characteristics Gate Threshold Voltage V GS(TH) V DS GS , I D =250µA 2.0 -- 4.0 V Static Drain-Source On-Resistance R DS(ON) V DS =10V,I D =4.5A -- 0.65 0.80 Ω Dynamic Characteristics Input Capacitance C ISS -- 870 -- pF Output Capacitance C OSS -- 130 -- pF Reverse Transfer Capacitance C RSS V DS =25V,V GS =0V, f=1MH Z -- 25 -- pF Switching Characteristics Turn-On Delay Time t D(ON) -- 20 -- ns Rise Time t R -- 70 -- ns Turn-Off Delay Time t D(OFF) -- 90 -- ns Fall Time t F V DD =250V,I D =9.0A, R G =25Ω (Note 4, 5) -- 60 -- ns Total Gate Charge Q G -- 30 -- nC Gate-Source Charge Q GS -- 4.0 -- nC Gate-Drain Charge Q GD V DS =400V, I D =9.0A , V GS =10V (Note 4, 5) -- 15 -- nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V,I SD =9.0A -- -- 1.4 V Continuous Drain-Source Current I SD -- -- 9.0 A Pulsed Drain-Source Current I SM -- -- 36.0 A Reverse Recovery Time t RR -- 340 -- ns Reverse Recovery Charge Q RR I SD =9.0A, dI SD /dt=100A/µs (Note 4) -- 3.0 -- µC BEIJING ESTEK ELECTRONICS CO.,LTD