E50N06 ESTEK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

V DSS = 60V I D25 = 50A R DS(ON) = 0.022Ω z Dynamic dv/dt Rating z 175 ْC Operating Temperature z Fast switching z Ease of Paralleling z Simple Drive Requirements

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its Pin1–Gate Pin2–Drain Pin3–Source wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I D C =25 ْC Continuous Drain Current, V GS @10V 50* I D C =100ْC Continuous Drain Current, V GS @10V I DM Pulsed Drain Current 200 A P D C =25ْC Power Dissipation 140 W Linear Derating Factor 1.0 W/ ْC V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 100 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns T J T STG Operating Junction and Storage Temperature Range –55 to +175 Soldering Temperature, for 10 seconds 300(1.6mm from case) Mounting Torque,6-32 or M3 screw

10 Ibf

in(1.1N Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case 1.0 R θCS Case-to-Sink, Flat, Greased Surface 0.50 R θJA Junction-to-Ambient ْC/W

Electrical Characteristics @T J =25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 60 — V V GS =0V,I D 250uA V (BR)DSS T J Breakdown Voltage Temp. Coefficient — 0.060 — V/ْC Reference to 25ْC,I D =1mA R DS(on) Static Drain-to-Source On-resistance — — 0.022 Ω V GS =10V,I D =25A V GS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS GS , I D =250µA g fs Forward Transconductance 17 — S V DS =25V,I D =25A — — V DS =60V,V GS =0V I DSS Drain-to-Source Leakage current — — 250 μA V DS =48V,V GS =0V,T J =150ْC Gate-to-Source Forward leakage — — 100 V GS =20V I GSS Gate-to-Source Reverse leakage — — -100 nA V GS =-20V Q g Total Gate Charge — — Q gs Gate-to-Source charge — — Q gd Gate-to-Drain ("Miller") charge — — nC I D =51A V DS =48V V GS =10V See Fig.6 and 13 t d(on) Turn-on Delay Time — 14 t r Rise Time — 110 t d(off) Turn-Off Delay Time — 45 t f Fall Time — 92 nS V DD =30V I D =51A R G =9.1Ω R D =0.55Ω See Figure 10 L D Internal Drain Inductance — 4.5 L S Internal Source Inductance — 7.5 nH Between lead, 6mm(0.25in.) from package and center of die contact C iss Input Capacitance — 1900 — C oss Output Capacitance — 920 C rss Reverse Transfer Capacitance — 170 pF V GS =0V V DS =25V f=1.0MH Z See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) 50* I SM Pulsed Source Current . (Body Diode) ① 200 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage 1.3 V T J =25ْC,I S =25A,V GS =0V ④ t rr Reverse Recovery Time 120 180 nS Q rr Reverse Recovery Charge 0.53 0.80 µC T J =25ْC,I F =51A di/dt=100A/µs ④ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L D Notes: ① Repetitive rating; pulse width limited by ③I SD ≤51A,di/dt≤250A/μS,V DD (BR)DSS max. junction temperature(see figure 11) T J ≤175 ْC ② V DD =25V ,starting T J =25 ْC ,L=44µH ④Pulse width≤300μS; duty cycle≤2%. R G =25Ω，I AS =51A(see Figure 12) E 50N06