ET830 ESTEK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
5 Amps，， ，，500Volts
■ Description The ET830 N5Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers ■ Features /circle6 R DS(ON) = 1.5Ω@V GS = 10 V /circle6 Low gate charge ( typical 20nC) /circle6 Fast switching capability /circle6 Avalanche energy specified /circle6 Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings c =25℃,unless otherwise specified) Ratings Parameter Symbol TO5220 TO5220F Units Drain5Source Voltage V DSS 500 V Gate5Source Voltage V GSS ±30 V T c =25℃ 5.0 5.0 A Drain Currenet Continuous T c =100℃ I D 3.0 3.0 A Drain Current Pulsed (Note 1) I DP 20 20 A Repetitive (Note 1) E AR 7.6 mJ Avalanche Energy Single Pulse (Note 2) E AS 305 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns T c =25℃ 76 40 W Total Power Dissipation Derate above 25℃ P D 0.6 0.32 W/ ℃ Junction Temperature T J +150 ℃ Storage Temperature T STG 555~+150 ℃ Drain current limited by maximum junction temperature. BEIJING ESTEK ELECTRONICS CO.,LTD
Thermal Resistance Junction5Ambient R thJA 62.5 Thermal Resistance, Case5to5Sink Typ. R thCS 0.5 55 Thermal Resistance Junction5Case R thJC 1.2 3.65 ℃/W
Electrical Characteristics
J =25℃,unless Otherwise specified.） 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22 mH, I AS = 5.0 A, V DD = 50V, R G = 25 Ω, Starting TJ = 25°C 3. I SD ≤ 5.0 A, di/dt ≤ 200A/μs, V DD ≤BV DSS , Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain5Source Breakdown Voltage BV DSS V GS =0V,I D =250µA 500 55 55 V V DS =500V,V GS =0V 55 55 1 µA Zero Gate Voltage Drain Current I DSS V DS =400V,T C =125℃ 55 55 10 µA Forward V GS =30V,V DS =0V 55 55 100 nA Gate5Body Leakage Current Reverse I GSS V GS =530V,V DS =0V 55 55 5100 nA Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D =250µA 55 0.6 55 V/ ℃ On Characteristics Gate Threshold Voltage V GS(TH) V DS GS , I D =250µA 2.0 55 4.0 V Static Drain5Source On5Resistance R DS(ON) V DS =10V,I D =2.5A 55 1.10 1.5 Ω Dynamic Characteristics Input Capacitance C ISS 55 520 55 pF Output Capacitance C OSS 55 80 55 pF Reverse Transfer Capacitance C RSS V DS =25V,V GS =0V, f=1MH Z 55 15 55 pF Switching Characteristics Turn5On Delay Time t D(ON) 55 10 55 ns Rise Time t R 55 50 55 ns Turn5Off Delay Time t D(OFF) 55 50 55 ns Fall Time t F V DD =250V,I D =5.0A, R G =25Ω (Note 4, 5) 55 50 55 ns Total Gate Charge Q G 55 20 55 nC Gate5Source Charge Q GS 55 2.5 55 nC Gate5Drain Charge Q GD V DS =400V, I D =5.0A, V GS =10V (Note 4, 5) 55 10 55 nC Drain-Source Diode Characteristics Drain5Source Diode Forward Voltage V SD V GS =0V,I SD =5.0A 55 55 1.4 V Continuous Drain5Source Current I SD 55 55 5.0 A Pulsed Drain5Source Current I SM 55 55 20.0 A Reverse Recovery Time t RR 55 260 55 ns Reverse Recovery Charge Q RR I SD =5.0A, dI SD /dt=100A/µs (Note 4) 55 2.0 55 µC ET830 BEIJING ESTEK ELECTRONICS CO.,LTD