ET740 ESTEK | Alldatasheet
Document overview
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Technical content
10.5 Amps，， ，，400Volts
■ Description The ET740 N5Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers ■ Features /circle6 R DS(ON) = 0.53Ω@V GS = 10 V /circle6 Low gate charge ( typical 30nC) /circle6 Fast switching capability /circle6 Avalanche energy specified /circle6 Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings c =25℃,unless otherwise specified) Ratings Parameter Symbol TO5220 TO5220F Units Drain5Source Voltage V DSS 400 V Gate5Source Voltage V GSS ±30 V T c =25℃ 10.5 10.5 A Drain Currenet Continuous T c =100℃ I D 6.6 6.6 A Drain Current Pulsed (Note 1) I DP 42 42 A Repetitive (Note 1) E AR 13.9 mJ Avalanche Energy Single Pulse (Note 2) E AS 378 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns T c =25℃ 139 45.5 W Total Power Dissipation Derate above 25℃ P D 1.11 0.36 W/ ℃ Junction Temperature T J +150 ℃ Storage Temperature T STG 555~+150 ℃ Drain current limited by maximum junction temperature. BEIJING ESTEK ELECTRONICS CO.,LTD ET740
Thermal Resistance Junction5Ambient R thJA 62.5 Thermal Resistance, Case5to5Sink Typ. R thCS 0.5 55 Thermal Resistance Junction5Case R thJC 0.90 2.75 ℃/W
Electrical Characteristics
J =25℃,unless Otherwise specified.） 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22 mH, I AS = 5.0 A, V DD = 50V, R G = 25 Ω, Starting TJ = 25°C 3. I SD ≤ 5.0 A, di/dt ≤ 200A/μs, V DD ≤BV DSS , Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain5Source Breakdown Voltage BV DSS V GS =0V,I D =250µA 400 55 55 V V DS =400V,V GS =0V 55 55 1 µA Zero Gate Voltage Drain Current I DSS V DS =320V,T C =125℃ 55 55 10 µA Forward V GS =30V,V DS =0V 55 55 100 nA Gate5Body Leakage Current Reverse I GSS V GS =530V,V DS =0V 55 55 5100 nA Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D =250µA 55 0.6 55 V/ ℃ On Characteristics Gate Threshold Voltage V GS(TH) V DS GS , I D =250µA 2.0 55 4.0 V Static Drain5Source On5Resistance R DS(ON) V DS =10V,I D =5.25A 55 0.43 0.53 Ω Dynamic Characteristics Input Capacitance C ISS 55 870 55 pF Output Capacitance C OSS 55 250 55 pF Reverse Transfer Capacitance C RSS V DS =25V,V GS =0V, f=1MH Z 55 85 55 pF Switching Characteristics Turn5On Delay Time t D(ON) 55 15 55 ns Rise Time t R 55 90 55 ns Turn5Off Delay Time t D(OFF) 55 80 55 ns Fall Time t F V DD =200V,I D =10.5A, R G =25Ω (Note 4, 5) 55 80 55 ns Total Gate Charge Q G 55 30 55 nC Gate5Source Charge Q GS 55 4.0 55 nC Gate5Drain Charge Q GD V DS =320V, I D =10.5A V GS =10V (Note 4, 5) 55 15 55 nC Drain-Source Diode Characteristics Drain5Source Diode Forward Voltage V SD V GS =0V,I SD =10.5A 55 55 1.5 V Continuous Drain5Source Current I SD 55 55 10.5 A Pulsed Drain5Source Current I SM 55 55 42.0 A Reverse Recovery Time t RR 55 300 55 ns Reverse Recovery Charge Q RR I SD =10.5A, dI SD /dt=100A/µs (Note 4) 55 2.5 55 µC BEIJING ESTEK ELECTRONICS CO.,LTD ET740