ET730 ESTEK | Alldatasheet
Document overview
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Technical content
6 Amps，， ，，400Volts
■ Description The ET730 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers ■ Features /circle6 R DS(ON) =1.00Ω@V GS = 10 V /circle6 Low gate charge ( typical 18nC) /circle6 Fast switching capability /circle6 Avalanche energy specified /circle6 Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings c =25℃,unless otherwise specified) Ratings Parameter Symbol TO-220 TO-220F Units Drain-Source Voltage V DSS 400 V Gate-Source Voltage V GSS ±30 V T c =25℃ 6.0 6.0 A Drain Currenet Continuous T c =100℃ I D 3.6 3.6 A Drain Current Pulsed (Note 1) I DP 24 24 A Repetitive (Note 1) E AR 7.6 mJ Avalanche Energy Single Pulse (Note 2) E AS 288 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns T c =25℃ 76 40 W Total Power Dissipation Derate above 25℃ P D 0.6 0.32 W/ ℃ Junction Temperature T J +150 ℃ Storage Temperature T STG -55~+150 ℃ Drain current limited by maximum junction temperature. BEIJING ESTEK ELECTRONICS CO.,LTD ET730
Thermal Resistance Junction-Ambient R thJA 62.5 Thermal Resistance, Case-to-Sink Typ. R thCS 0.5 -- Thermal Resistance Junction-Case R thJC 1.64 3.13 ℃/W
Electrical Characteristics
J =25℃,unless Otherwise specified.） 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14 mH, I AS = 6.0 A, V DD = 50V, R G = 25 Ω, Starting TJ = 25°C 3. I SD ≤ 6.0 A, di/dt ≤ 200A/μs, V DD ≤BV DSS , Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2% 5. Essentially independent of operating temperature Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V,I D =250µA 400 -- -- V V DS =400V,V GS =0V -- -- 1 µA Zero Gate Voltage Drain Current I DSS V DS =320V,T C =125℃ -- -- 10 µA Forward V GS =30V,V DS =0V -- -- 100 nA Gate-Body Leakage Current Reverse I GSS V GS =-30V,V DS =0V -- -- -100 nA Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D On Characteristics Gate Threshold Voltage V GS(TH) V DS GS , I D =250µA 2.0 -- 4.0 V Static Drain-Source On-Resistance R DS(ON) V DS =10V,I D =3.0A -- 0.83 1.0 Ω Dynamic Characteristics Input Capacitance C ISS -- 520 -- pF Output Capacitance C OSS -- 80 -- pF Reverse Transfer Capacitance C RSS V DS =25V,V GS =0V, f=1MH Z -- 15 -- pF Switching Characteristics Turn-On Delay Time t D(ON) -- 10 -- ns Rise Time t R -- 60 -- ns Turn-Off Delay Time t D(OFF) -- 20 -- ns Fall Time t F V DD =200V,I D =6.0A, R G =25Ω (Note 4, 5) -- 40 -- ns Total Gate Charge Q G -- 18 -- nC Gate-Source Charge Q GS -- 2.5 -- nC Gate-Drain Charge Q GD V DS =320V, I D =6.0A V GS =10V (Note 4, 5) -- 8.5 -- nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V,I SD =6.0A -- -- 1.5 V Continuous Drain-Source Current I SD -- -- 6.0 A Pulsed Drain-Source Current I SM -- -- 24.0 A Reverse Recovery Time t RR -- 250 -- ns Reverse Recovery Charge Q RR I SD =6.0A, dI SD /dt=100A/µs (Note 4) -- 2.0 -- µC BEIJING ESTEK ELECTRONICS CO.,LTD