ET630 ESTEK | Alldatasheet
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Technical content
9 Amps，200Volts
■ DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers ■ FEATURES * RDS(ON) = 0.4Ω@VGS = 10 V * Ultra low gate charge ( typical 19 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability ■ SYMBOL ■ ABSOLUTE MAXIMUM RATINGS c =25℃,unless otherwise specified) PARAMETER SYMBOL PATINGS UNIT Drain-Source V oltage V DSS 200 V Gate-Source V oltage V GSS ±20 V T c =25℃ 9 A Drain Currenet Continuous T c =100℃ I D 6.3 A Drain Current Pulsed I DP 8.0 A Repetitive(Note 2) E AR 9 mJ Avalanche Energy Single Pulse(Note 3) E AS 150 mJ Peak Diode Recovery dv/dt(Note 4) dv/dt 3.5 v/ns T c =25℃ 88 W Total Power Dissipation Derate above 25℃ P D
51 W/℃
J +150 ℃ BEIJING ESTEK ELECTRONICS CO.,LTD E T 6 3 0
-55~+150 ℃ Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged Absolute maximum ratings are stress ratings only and functional device operation is not implied 2.Repetitive Rating:Pulse width limited bu maximum junction temperature THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-220 80 Thermal Resistance Junction-Ambient TO-220F θ JA TO-220 1.67 Thermal Resistance Junction-Case TO-220F θ JC 2.45 ℃/W
ELECTRICAL CHARACTERISTICS
J =25℃,unless Otherwise specified.） PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown V oltage BV DSS V GS =0V ,I D =250μA 200 V V DS =200V ,V GS =0V 10 μA Zero Gate V oltage Drain Current I DSS V DS =200V ,T C =125℃ 100 μA Forward V GS =20V ,V DS =0V 100 nA Gate-Body Leakage Current Reverse I GSS V GS =－20V ,V DS =0V －100 nA Breakdown V oltage Temperature △BV DSS /△T J I D =250μA 0.1 V/℃ On Characteristics Gate Threshold V oltage V GS(TH) V DS GS , I D =250μA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V DS =10V ,I D =5A 0.25 0.4 Ω Dynamic Characteristics Input Capacitance C ISS 600 pF Output Capacitance C OSS 250 pF Reverse Transfer Capacitance C RSS V DS =25V ,V GS =0V ,f=1MH Z 80 pF ■ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Switching Characteristics Turn-On Delay Time t D ON 30 ns Rise Time t R 50 ns Turn-Off Delay Time t D OFF 50 ns Fall Time t F V DD =100V ,I D =9A,R G =9.1Ω 40 ns Total Gate Charge Q G 19 30 nC Gate-Source Charge Q GS 10 nC Gate-Drain Charge Q GD V DS =160V ,V GS =10V ,I D =9A 9 nC Drain-Source Diode Characteristics Drain-Source Diode Forward V oltage V SD V GS =0V ,I SD =9A 2 V Continuous Drain-Source Current I SD 9 A Pulsed Drain-Source Current I SM 36 A Reverse Recovery Time t RR 450 ns Reverse Recovery Charge Q RR I SD =9A,dI SD /dt=100A/μs 3 μC Note:1.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2% 2.Essentially Independent of Operating Temperature3 BEIJING ESTEK ELECTRONICS CO.,LTD
■ TYPICAL CHARACTERISTICS E T 6 3 0 BEIJING ESTEK ELECTRONICS CO.,LTD
■ TYPICAL CHARACTERISTICS (Cont.) E T 6 3 0 BEIJING ESTEK ELECTRONICS CO.,LTD
BEIJING ESTEK ELECTRONICS CO.,LTD