ET4N60 ESTEK | Alldatasheet
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www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 1 600V, 4A, N-Channel Power MOSFET Features Symbol Applications Pin Description Ordering Information Pin Assignment Part Number Package 1 2 3 Packing ET4N60-220-T TO-220 G D S Tube ET4N60-220F-T TO-220F G D S Tube ET4N60-252-T TO-252 G D S Tube ET4N60-252-R TO-252 G D S Tape Reel ¾ Switching Application ¾ Adaptor ¾ LED Lighting ¾ RDS(ON)= (Max. 2.5 Ω)@VGS=10V. ¾ Gate Charge (Typical 15nC). ¾ Improved dv/dt Capability, High Ruggedness. ¾ 100% Avalanche Tested. ¾ Maximum Junction Temperature Range(150oC). VDSS=600V IDS=4A RDS(ON)=2.5 Ω
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 2 Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V Continuous Drain Current(@TC = 25 °C) 4.0 A ID Continuous Drain Current(@TC = 100 °C) 2.5 A IDM Drain Current Pulsed 16 A VGS Gate to Source Voltage +30 V EAS Single Pulsed Avalanche Energy 240 mJ EAR Repetitive Avalanche Energy 10 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns TO-220 105 TO-220F 33 PD Total Power Dissipation (@TC = 25 °C) TO-252 50 W TSTG, TJ Storage Temperature, Junction Temperature -55~150 °C Notes: (1).. Repeativity rating : pulse width limited by junction temperature (2).. L = 27.5mH, IAS = 4.0 A, VDD = 50 V, RG = 25 Ω , Starting TJ = 25 °C (3).. ISD ≤ 4.0 A, di/dt ≤ 200 A/us, VDD ≤ BVDSS, Starting TJ = 25 °C Thermal Characteristics Value Symbol Parameter Min. Typ. Max. Units TO-220 - - 1.18 TO-220F - - 3.79 RθJC Thermal Resistance, Junction-to-Case TO-252 - - 2.5 TO-220 - - 62.5 TO-220F 62.5 RθJA Thermal Resistance, Junction-to-Ambient TO-252 83 °C/W Source-Drain Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Min. Typ. Max. Units IS Maximum Continuous Source-Drain Diode Forward Current - - 4.0 ISM Maximum Pulsed Source-Drain Diode Forward Current - - 16 A VSD Diode Forward Voltage IS = 4.0 A, VGS = 0 V - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge IS = 4.0 A, VGS = 0 V, dIF/dt = 100 A/us - 2.2 - uC
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 3 Electrical Characteristics (TC=25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 600 - - V ΔBVDSS/ ΔTJ Breakdown Voltage Temperature coefficient ID = 250 uA, Referenced to 25 °C - 0.6 - V/°C VDS = 600 V, VGS = 0 V - - 10 uA IDSS Drain-Source Leakage Current VDS = 480 V, TC = 125 °C - - 100 uA Gate-Source Leakage, Forward VGS = 30 V, VDS = 0 V - - 100 nA IGSS Gate-source Leakage, Reverse VGS = -30 V, VDS = 0 V - - -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 2.0 A - 2.0 2.5 Ω Dynamic Characteristics Ciss Input Capacitance - 545 710 Coss Output Capacitance - 60 80 Crss Reverse Transfer Capacitance VGS = 0 V, VDS =25 V, f = 1 MHz - 8 11 pF Dynamic Characteristics td(on) Turn-on Delay Time - 10 30 tr Rise Time - 35 80 td(off) Turn-off Delay Time - 45 100 tf Fall Time VDD = 300 V, ID = 4.0 A, RG =25 Ω Pulse Width ≤ 300us, - 40 90 ns Qg Total Gate Charge - 15 20 Qgs Gate-Source Charge - 2.8 - Qgd Gate-Drain Charge(Miller Charge) VDS = 480 V, VGS = 10 V, ID = 4.0 A - 6.2 - nC
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 4 Typical Characteristics
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 5 Typical Characteristics (Continued)
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 6 Package Information TO-220
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 7 Package Information TO-220FP
www.estek.com.cn Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 8 Package Information TO-252