ESJA57-04A NJSEMI | Alldatasheet
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Technical content
E.IIE. , L/ na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA57-04A 2. OUT VIEW Shape and dimensions are described 3. IDENTIFICATION The diode shall be marked with Cathode Mark 4. RATINGS AND CHARACTER ISTICS 4.1 ABSOLUTE MAX. RATINGS. ( Ta=25 6C unless otherwise noted. ) Items Repetitive peak reverse voltage. Non-Repetitive peak forward current. Average forward current. Allowable junction temperature. Storage temperature range. Allowable operating case temperature. Cond i t i ons SOrte Sine-half wave peak value* 50Hz Sine Wave Symbo 1 s VRRM 1 r SM
1 A V
0.5 120 -40-120 100 Units kVpeak Apeak mA 4.2 ELECTR i CAL CHARACTER ISTICS ( Ta=25 °C unless otherwise noted. ) Items Maximum forward voltage drop Cond i t i ons IF=10mA Maximum reverse current j VR= 4kV Symbo 1 s VF Ratings IR, | 2 Units V Qual Maximum reverse current j VR= 4kV. 100°C Maximum reverse recovery time ! !F=2mA. IR=4mA i Maximum junction capacitance f=lMHz. VR=OV
4.3 MECHANICAL CHARACTERISTICS
Weight : Ca. 0.2 gr. Vibrat ion proof : 5 G ity Semi-Conductors IRj j 5 j AA trr | 0.08 t /uS Cj j 2 j pF i
.130(3 f~ MAX 3) -I A =^k p> " 1.30(33.02) .020 ±.003 (.50 ±.08) .300(7.62) MAX, .350(8.89) MAX