ES5AC HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 50V-600V
- High surge current capability
Applications
- Rectifier From A To JX Marking Polarity: Color band denotes cathode Glass passivated chip ● ES5XC H igh Diode Semiconductor
FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 0 50 100 150 FIG.1 FORWARD CURRENT DERATING CURVE IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 1.0 1.0 2.0 3.0 4.0 5.0 IFSM(A) Number of Cycles : FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 12 1 0 2 0 100 100 150 175 IF(A) TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) ES5H-ES5J ES5F-ES5G ES5A-ES5D 1.8 2.0 V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time Typical Characteristics H igh Diode Semiconductor
0.108 (2.75) 0.123 (3.25) 0.256(6.50) 0.280(7.10) 0.217(5.50) 0.240(6.10) 0.087(2.2) 0.106(2.7) 0.035(0.90) 0.055(1.40) 0.291(7.40) 0.331(8.40) 0.012(0.30) 0.007(0.17) 0.008(0.203)MAX. Dimensions in inches and (millimeters) Package Outline Dimensions SMC Suggested Pad Layout SMC 6.5 3.5 1.8 JSHD JSHD H igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMC H igh Diode Semiconductor