ES5ABF HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o

  • VRRM 50V-600V
  • High surge current capability

Applications

  • Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● ES5ABF-ES5JBF : ES5AB-ES5JB Electrical Characteristics (Ta=25℃ Unless otherwise specified） Super Fast Recovery Rectifier Diode ES5ABF THRU ES5JBF ES5 Item Symbol Unit Test Conditions Repetitive Peak Reverse Voltage V RRM V 50 100 150 200 300 400 500 600 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T L =100℃ 5.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 150 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 V RMS V 35 70 105 140 210 280 350 420 ABF BBF CBF DBF FBF GBF HBF JBF ES5 Item Symbol Unit Test Condition Peak Forward Voltage V F V I F Maximum reverse recovery time t rr ns I F =0.5A,I R =1.0A,I rr =0.25A 35 I RRM1 Ta =25℃ 10 Peak Reverse Current I RRM2 μA V RM RRM Ta =100℃ 500 R θJ-A Between junction and ambient 40 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and terminal 12 ABF BBFCBF DBF FBF GBF HBF JBF Maximum RMS Voltage

H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 1.0 2.0 3.0 4.0 5.0 6.0 7.0 25 50 75 100 125 150 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave 11 0 1 0 0 100 125 150 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 100 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 ES5ABF-DBF ES5FBF-GBF ES5HBF-JBF FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=150 0 20 40 60 80 100 0.1 1.0 100 1000 Tj=25 Tj=100 10000 Tj=125 V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time

H igh Diode Semiconductor SMBF SMBF 1.73(4.40) 1.65(4.20) 1.46(3.70) 1.38(3.50) 0.86(2.20) 0.75(1.90) 2.16(5.50) 2.00(5.10) .100(0.26) .007(0.18) .051(1.30) .043(1.10) Dimensions in inches and (millimeters) .040(1.00) 4.80 2.54 1.8

Reel Taping Specifications For Surface Mount Devices-SMBF H igh Diode Semiconductor 3.80 0.150 5.75 0.226