ES2AF ZSELEC | Alldatasheet
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! G lass Passivated Die Construction ! Low Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanic al Data ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RM S) 35 70 105 140 210 280 420 V A v erage Rectified Output Current @T L = 100° C I O 2.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward Vo ltage @I F = 2. 0A V FM 0.95 1.25 1.7 V P e a k R e v e r s e C u r r e n t @ TA = 25° C At Rated DC Blocking Voltage @T A = 100 °C IRM 5.0 100 µA Revers e Recovery Time (Note 1) trr 35 nS T ypical Junction Capacitance (Note 2) Cj 45 pF T ypical Thermal Resistance (Note 3) R/G01JL 75 °C/W Operat ing and Storage Temperature Range Tj, TSTG -65 to +150 ° C Note: 1. Measured with IF = 0. 5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 ES2AF – ES2JF Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SM AF 3.603.20 2.802.40 A B C DF Dim Min Max A B C D E F G All D imensions in mm E G 0.200.10 4.804.40 1.100.90 0.90 - 1.431.38 ES2BF ES2CF ES2DF ES2EF ES2GF ES2JF W eight: 0.037 grams (approx.) Alldatasheet
2 of 2 ES2AF – ES2JF ES2AF – ES2JF Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com /G01/G01 0.01 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 50V DC Approx NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 02 5 5 0 75 100 125 150 175 I , AVERAGE FWD RECTIFIED CURRENT (A)(AV) T,LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° Singlephasehalfwave ResistiveorInductiveload -ES2AF-ES2DF -ES2EF-ES2GF ES2JF 1.0 2.0 1 10 100 R O F K A E P , I ) A ( T N E R R U C E G R U S D R A W M S F NUMBER OFCYCLES A T 60Hz Fig. 3 Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) 0.1 1.0 100 1000 0 40 80 120 ( T N E R R U C E S R E V E R S U O E N A T N A T S N I , I ) A R µ PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T = 125Cj ° T = 25 Cj ° Alldatasheet