ES2AA HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 50V-600V
- High surge current capability
Applications
- Rectifier From A To JX Marking Polarity: Color band denotes cathode Glass passivated chip ● ES2X H igh Diode Semiconductor SMAK ES2AA THRU ES2JA Notes: pad areas Electrical Characteristics (Ta=25℃ Unless otherwise specified） ES2 Item Symbol Unit Test Conditions A B C D F G H J Repetitive Peak Reverse Voltage V RRM V 50 100 150 200 300 400 500 600 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T L =110℃ 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 ES2 Item Symbol Unit Test Condition A B C D F G H J Peak Forward Voltage V F V I F Maximum reverse recovery time t rr ns I F =0.5A,I R =1.0A,I rr =0.25A 35 I RRM1 Ta =25℃ 5.0 Peak Reverse Current I RRM2 μA V RM RRM Ta =100℃ 100 R θJ-A Between junction and ambient 75 Thermal Resistance(Typical) R θJ-L ℃/W Between junction and terminal 20 V RMS V 35 70 105 140 210 280 350 420Maximum RMS Voltage
H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave 11 0 1 0 0 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 ES2A-D ES2F-G ES2H-J FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=150 0 20 40 60 80 100 0.1 1.0 100 1000 Tj=25 Tj=100 Tj=125 10000 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) 60Hz Resistive or Inductive Load (7.0mm×7.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5
H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA