ES1F DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MA XIMUM RA TINGS AND ELECTRICAL CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES1 ES1A UNITS Maximum recurrent peak reverse voltage V RRM 400 600 V Max imum RMS v oltage V RMS 280 420 V Max imum DC bloc king v oltage V DC 400 600 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.5/0.7A V F V Maximum reverse current @T A =25 5.0 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. VOLTAGE RANGE: 1500 --- 600 V CURRENT: 0.7 A 200 ES1Z A0.7 DO - 41 I F(AV) The plastic material carries U/L recognition 94V-0 0.5 A I FSM 10.0 2.0 20.0 30.0 2.5 3. Thermal resistance from junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. -55----+150 -55---- +150 350 I R 100.0 ES1F---ES1A 1500 1050 1500 ES1F Easily cleaned with Freon,Alcohol,Isopropanol 200 140 FAST RECOVERY RECTIFIERS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.2 05 0 0.4 0.6 0.8 1.0 25 75 100 125 150 ES1Z ES1 ES1A ES1F Single Phase Half Wave 60Hz Resistive or Inductive Load 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 100 T J =25 Pulse Width=300 µ S ES1~ ES1A ES1F~ ES1Z PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) t rr -1.0A -0.25A +0.5A 1cm AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF N U MBER OF C YC LES AT 60H z R EVER SE VOLT AGE,VOLT S INSTANTANEOUS FORWARD CURRENT PEAK FORWARD SURGE CURRENT ES1F---ES1A SE T TIM E BASE FOR 50/100 ns /cm AMBIENT T EMPER AT U RE, N O TE S: 1. R ISE TIM E = 7ns M AX. IN P U T IM P E D AN C E = 1M . 22P F FI G. 1 -- REVERSE RECOVERY TI ME CHARACTERI STI C AND TEST CI RCUI T DI AGRAM FI G. 2 -- FORWARD DERATI NG CURVE FIG.4-- PEAK FORWARD SURGE CURRENT FIG.5-- TYPICAL JUNCTION CAPACITANCE 2. R ISE TIM E = 10ns M AX. SOU R C E IM P E D AN C E = 50 AVERAGE FORWARD CURRENT FI G. 3 -- TYPI CAL FORWARD CHARACTERI STI C INSTANTANEOUS FORWARD CURRENT, VOLTS T J =25 f=1MHz .4 1.0 2 100 4 10 20 40 100 www.diode.kr Diode Semiconductor Korea