ES1A ZSELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
! G l ass Passivated Die Construction ! I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y B ! Low Forward Voltage Drop, High Efficiency ! S u r g e O v e r l o a d R a t i n g t o 3 0 A P e a k D ! L o w P o w e r L o s s A ! S u p e r - F a s t R e c o v e r y T i m e F ! Plastic Case Material has UL Flammability C l a s s i f i c a t i o n R a t i n g 9 4 V - O C H G /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01E Mechanical D ata ! Ca se: SMA/DO-214AC, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.064 grams (approx.) ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Av erage Rectified Output Current @T L = 120°C IO 1.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 30 A Forward Vo ltage @I F = 1. 0A V FM 0.95 1.25 1.7 V P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 5.0 500 µA Revers e Rec overy Time (Note 1) trr 35 nS T y pical Junction Capacitance (Note 2) Cj 10 pF T y pical Thermal Resistance (Note 3) R/G01JL 35 °C Operat i ng and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. SMA /DO-214AC Dim M in Max A 2.50 2. B 4.00 4. C 1.20 1. D 0.152 0. 305 E 4.80 5. F 2.00 2. G 0.051 0. 203 H 0.76 1. All Di mensions in mm 1 of 2 ES1A – ES1J Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet
0.01 0.1 1.0 0 0.2 0.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OFCYCLES AT 60Hz Fig. 3 PeakForward Surge Current Pulse width 8.3 ms single half-sine-wave (JEDEC method) 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 100 1 10 100 C ,CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° 0.25 0.50 0.75 1.00 02 5 5 0 75 100 125 150 175 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T,LE AD TEMPER ATURE Fig. 1 Forward Current Derating Curve L ° Singlephasehalfwave ResistiveorInductiveload ES1A - ES1D ES1E - ES1G ES1J 2 of 2 ES1A – ES1J ES1A – ES1J Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet