ES1A-28J-29 HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o

  • VRRM 50V-600V
  • High surge current capability

Applications

  • Rectifier From A To JX Marking Polarity: Color band denotes cathode Glass passivated chip ● ES1X H igh Diode Semiconductor SMAJ ES1A THRU ES1J ES1 Item Symbol Unit Test Conditions A B C D E G H J Repetitive Peak Reverse Voltage V RRM V 50 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T a =75 ℃ 1.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 30 Junction Temperature T J ℃ -55~+125 Storage Temperature T STG ℃ -55 ~ +150 100 150 200 300 400 500 600 V RMS V 35 70 105 140 210 280 350 420 Electrical Characteristics (T=25℃ Unless otherwise specified） ES1 Item Symbol Unit Test Condition A B C D E G H J V F V I F =1.0A 0.95 1.25 1.70 Maximum reverse recovery time =0.25A 35 I RRM1 Peak Reverse Current I 100 R θJ-A Between junction and ambient Thermal Resistance(Typical) R θJ-L /W℃ Between junction and terminal Notes: pad areas t rr ns I F =0.5A,I R =1.0A,I rr μA V RM RRM Ta =25℃ Ta =100℃ Peak Forward Voltage Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. Maximum RMS Voltage

H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) ES1A-ES1D 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 100 0.2 0.4 0.6 0.8 1.0 FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 ES1H-ES1J ES1F-ES1G

H igh Diode Semiconductor SMAJ SMAJ 4.12 1.8 Dimensions in inches and (millimeters) 0.177(4.50) 0.157(3.99) 0.110(2.80) 0.098(2.50) 0.060(1.52) 0.030(0.76) 0.222(5.66) 0.194(4.93) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.42) 0.078(1.98) 0.067 (1.70) 0.047 (1.20)

Reel Taping Specifications For Surface Mount Devices-SMA H igh Diode Semiconductor