ERB43-02 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERB43-04 UNITS Maximum recurrent peak reverse voltage V RRM 400 V Max imum RMS v oltage V RMS 280 V Maximum DC blocking voltage V DC 400 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.5 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. I FSM A -55----+150 -55----+150 I R 20.0 5.0 100.0 1.2 A 200 ERB43-02---EB43-04 140 200 DO - 41 Easily cleaned with Freon,Alcohol,Isopropanol ERB43-02 400 VOLTAGE RANGE: 200 --- 400 V CURRENT: 0.5 A 0.5 A FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
.1 .2 .4 1.0 2 4 10 20 40 100 T J =25 f=1MHz T J =125 8.3ms Single Half Sine-Wave 24 108 10040 60 80 0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 100 T J =25 Pulse Width=300 µ S 1.8 2.0 0.1 0.3 0.2 0.4 0.5 0.6 0.7 40 60 80 100 120 Single Phase Half Wave 60Hz Resistive or Inductive Load 140 150 t rr -1.0A -0.25A +0.5A 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) AMPERES AMPERES JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES ERB43-02---ERB43-04 SE T TIM E BASE FOR 50/100 ns /cm INSTANTANEOUS FORWARD VOLTAGE,VOLTS AMBIENT T EMPERAT URE, N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM AVERAGE FORWARD RECTIFIED CURRENT FIG.4--TYPICAL JUNCTION CAPACITANCE FIG.5--PEAK FORWARD SURGE CURRENT 2. RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O INSTANTANEOUS FORWARD CURRENT FIG.3 -- FORWARD DERATING CURVE FIG.2 --TYPICAL FORWARD CHARACTERISTIC REVERSE VOLTAGE,VOLTS NUMBER OF CYCLES AT 60 Hz www.diode.kr Diode Semiconductor Korea